Publications‎ > ‎

2009

G. Acbas, M.-H. Kim, M. Cukr, V. Novak, M.A. Scarpulla, O.D.  Dubon, T. Jungwirth, J. Sinova, and J. Cerne, “Electronic structure of ferromagnetic semiconductor Ga1xMnxAs probed by subgap magneto-optical spectroscopy,” Phys. Rev. Lett. 103, 137201 (2009).

S. Ahlers, P. R. Stone, N. Sircar, E. Arenholz, O. D. Dubon and D. Bougeard, "Comparison of the Magnetic Properties of Gemn Thin Films through Mn L-Edge X-Ray Absorption," Appl. Phys. Lett. 95, 151911 (2009).

R. Broesler, E. E. Haller, W. Walukiewicz, T. Muranaka, T. Matsumoto and Y. Nabetani, "Temperature Dependence of the Band Gap of ZnSe1-xOx," Appl. Phys. Lett. 95, 151907  (2009).

C.-H. Chen, K.M. Yu, and W. Walukiewicz, “Optical properties of ion beam synthesized nitrogen-rich GaN1-xAs,” phys. stat. sol (c) 6(S2), S796-S799 (2009). 

R. Farshchi, D. J. Hwang, N. Misra, C. C. Julaton III, K. M. Yu, C. P. Grigoropoulos, and O. D. Dubon, “Structural, magnetic, and transport properties of laser-annealed GaAs:Mn–H,” J. Appl. Phys. 106, 013904 (2009).

R. Farshchi, D. J. Hwang, R. V. Chopdekar, P. D. Ashby, C. P. Grigoropoulos and O. D. Dubon, "Ultrafast Pulsed-Laser Dissociation of Mn-H Complexes in GaAs," J. Appl. Phys. 106, 103918  (2009).

J. Guzman, S. J. Shin, C. Y. Liao, C. W. Yuan, P. R. Stone, O. D. Dubon, K. M. Yu, J. W. Beeman, M. Watanabe, J. W. Ager, D. C. Chrzan and E. E. Haller, "Photoluminescence Enhancement of Er-Doped Silica Containing Ge Nanoclusters," Appl. Phys. Lett. 95, 201904  (2009).

M. E. Hawkridge, Z. Liliental-Weber, K. M. Yu, L. A. Reichertz, W. J. Schaff, J. W. Ager, and W. Walukiewicz, “Stacking faults and phase changes in Mg-doped InGaN grown on Si,” phys. stat. sol. (c) 6(S2), S421-S424 (2009).

M.E. Hawkridge,  Z. Liliental-Weber, H. J. Kim, S. Choi, D. Yoo, J.-H. Ryou and R. D. Dupuis, “Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth,” Appl. Phys. Lett. 94, 171912 (2009).

R. E. Jones, S. X. Li, K. M. Yu, J. W. Ager III, E. E. Haller, W. Walukiewicz, H. Lu, and W. J. Schaff, “Properties of Native Point Defects in In1-xAlxN Alloys,” J. Phys. D: Appl. Phys. 42(7), 095406 (2009). 

D. R. Khanal, W. Walukiewicz, J. Grandal, E. Calleja and J. Wu, "Determining Surface Fermi Level Pinning Position of InN Nanowires Using Electrolyte Gating," Appl. Phys. Lett. 95, 173114  (2009).

Z. Liliental-Weber, K. M. Yu, M. Hawkridge, S. Bedair, A. E. Berman, A. Emara, J. Domagala and J. Bak-Misiuk, "Structural Perfection of InGaN Layers and Its Relation to Photoluminescence," phys. stat. sol. (c) 6, 12, 2626-2631 (2009).

Z. Liliental-Weber, K.M. Yu, M. Hawkridge, S. Bedair, A.E. Berman, A. Emara, J. Domagala,and J. Bak-Misiuk, “Spontaneous stratification of InGaN layers and its influence on optical properties,” phys. stat. sol. (c) 6(S2), S433-S436 (2009).

Z.X. Ma, K.M. Yu, W. Walukiewicz, P.Y. Yu, and S.S. Mao, “Strain relaxation of CdTe films growing on lattice-mismatched substrates,” Appl. Phys. A 96(2), 379-84 (2009).

N. Miller, J. W. Ager III, R. E. Jones, H. M. Smith III, M. A. Mayer, K. M. Yu, M. E. Hawkridge, Z. Liliental-Weber, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmüller and J. S. Speck, "Electrical and Electrothermal Transport in InN: The Roles of Defects," Physica B: Condens. Matt. 404, 23-24, 4862-4865 (2009).

S. Miyamoto, O. Moutanabbir, E.E. Haller, and K.M. Itoh, “Spatial correlation of self-assembled isotopically pure Ge/Si (001) nanoislands,” Phys. Rev. B 79, 165415 (2009). 

S.V. Novikov, C. R. Staddon, A. V. Akimov, R. P. Campion, N. Zainal, A. J. Kent, C. T. Foxon, C-H Chen, K. M. Yu, W. Walukiewicz, “Molecular beam epitaxy GaN layers with high As content,” J. Cryst. Growth 311, 3417–22 (2009). 

H. Pan, N. Misra, S.H. Ko, C. P. Grigoropoulos, N. Miller, E.E. Haller, and O. Dubon, “Melt-mediated coalescence of solution-deposited ZnO nanoparticles by excimer laser annealing for thin-film transistor fabrication,” Appl. Phys. A 94(1), 111-5  (2009).

L.A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz and J. W. Ager, "Demonstration of a III-Nitride/Silicon Tandem Solar Cell," Appl. Phys. Exp., 2, 122202  (2009).

J.T. Robinson, A. Rastelli, O. Schmidt, O.D. Dubon, “Global faceting behavior of strained Ge islands on Si,” Nanotechnology 20, 085708 (2009).

Y.E. Romanyuk, D. Kreier, Y. Cui, K. M. Yu, J. W. Ager and S. R. Leone, "Molecular Beam Epitaxy of InGaN Thin Films on Si(111): Effect of Substrate Nitridation," Thin Solid Films 517, 24, 6512-6515 (2009).

J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager III, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, and D. Bougeard, “A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure,” phys. stat. sol. RRL 3(2-3), 61-3 (2009)

F. Schmid, K. Semmelroth, M. Krieger, H.B. Weber, G. Pensl, and E.E. Haller, “Ionization energies of phosphorus donors in 6H-SiC,” Mat. Sci. Forum 600-603, 441-4 (2009). 

Q. Song, K. H. Chow, R. I. Miller, I. Fan, M. D. Hossain, R. F. Kiefl, S. R. Kreitzman, C. D. P. Levy, T. J. Parolin, M. R. Pearson, Z. Salman, H. Saadaoui, M. Smadella, D. Wang, K. M. Yu, X. Liu, J. K. Furdyna, W. A. MacFarlane, “Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn,” Physica B 404, 892 (2009). 

M. Steger, A. Yang, D. Karaiskaj, M. L. W. Thewalt, E. E. Haller, J. W. Ager III, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, and H.-J. Pohl, “Shallow impurity absorption spectroscopy in isotopically enriched silicon,”  Phys. Rev. B 79, 205210 (2009). 

M. Steger, A. Yang, M.L.W. Thewalt, M. Cardona, H. Riemann, N.V. Abrosimov, M.F. Churbanov, A.V. Gusev, A.D. Bulanov, I.D. Kovalev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.-J. Pohl, E.E. Haller, J.W. Ager, “High-resolution absorption spectroscopy of the deep impurities S and Se in 28Si revealing the 77Se hyperfine splitting,” Phys. Rev. B 80, 115204 (2009). 

T.L. Williamson, M. A. Hoffbauer, K. M. Yu, L. A. Reichertz, M. E. Hawkridge, R. E. Jones, N. Miller, J. W. Ager III, Z. Liliental-Weber, and W. Walukiewicz, “Highly luminescent InxGa1-xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE),” phys. stat. sol. (c) 6(S2), S409-S412 (2009). 

A. Yang, M. Steger, T. Sekiguchi, M.L.W. Thewalt, J.W.  Ager, and E.E. Haller, “Homogeneous linewidth of the 31P bound exciton transition in silicon,” Appl. Phys. Lett. 95, 122113 (2009).  

A. Yang, M. Steger, T. Sekiguchi, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, J. W. Ager and E. E. Haller, "Single-Frequency Laser Spectroscopy of the Boron Bound Exciton in 28Si," Phys. Rev. B 80, 195203 (2009).

C.W. Yuan, D. O. Yi, I. D. Sharp, S. J. Shin, C. Y. Liao, J. Guzman, J. W. Ager, E. E. Haller and D. C. Chrzan, "Size-Distribution Evolution of Ion-Beam-Synthesized Nanoclusters in Silica," Phys. Rev. B 80, 134121 (2009).

C.W. Yuan, C. N. Boswell, S. J. Shin, C. Y. Liao, J. Guzman, J. W. Ager, III, E. E. Haller, and D. C. Chrzan, “Processing route for size distribution narrowing of ion beam synthesized nanoclusters,” Appl. Phys. Lett. 95, 083120 (2009).

C.W. Yuan, D. O. Yi, I. D. Sharp, S. J. Shin, C. Y. Liao, J. Guzman, J. W. Ager, III, E. E. Haller, and D. C. Chrzan, “Theory of Nanocluster Size Distributions from Ion Beam Synthesis,” Phys. Rev. Lett. 102, 146101 (2009).

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz and C. T. Foxon, "Highly Mismatched Crystalline and Amorphous Ga1-xAsx Alloys in the Whole Composition Range," J. Appl. Phys. 106, 103709 (2009).

Y.Y. Zhou, X. Liu, J. K. Furdyna, M. A. Scarpulla and O. D. Dubon, "Ferromagnetic Resonance Investigation of Magnetic Anisotropy in Ga1-xMnxAs Synthesized by Ion Implantation and Pulsed Laser Melting," Phys. Rev. B 80, 224403 (2009).