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J. W. Ager, N. Miller, R.E. Jones, K.M. Yu, J. Wu, W.J. Schaff, W. Walukiewicz, “Mg-doped InN and InGaN – photoluminescence, capacitance-voltage and thermopower measurements,” phys. stat. sol. (b) 245(5), 873-7 (2008).

K. Alberi, J. Blacksberg, L.D. Bell, S. Nikzad, K.M. Yu, O.D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1-x semiconducting alloys,” Phys. Rev. B 77, 073202 (2008).

K. Alberi, O.D. Dubon, W. Walukiewicz, K.M. Yu, J.A. Gupta, and J.M. Baribeau, “Composition dependence of the hole mobility in GaSbxAs1-x,” Appl. Phys. Lett. 92, 162105 (2008).

K. Alberi, K.M. Yu, P.R. Stone, O.D. Dubon, W. Walukiewicz, X. Liu, and J. K. Furdyna, “The formation of a Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing,” Phys. Rev. B 78, 075201 (2008).

F.Z. Amir, K. Clark, E. Maldonado, W.P. Kirk, J.C. Jiang, J.W. Ager, K.M. Yu, and W. Walukiewicz, “Epitaxial growth of CdSexTe1-x thin films on Si(100) by molecular beam epitaxy using lattice mismatch graded structures,” J. Cryst. Growth 310, 1081-7 (2008).

C. Arnaboldi, D. R. Artusa, F. T. Avignone III, M. Balata, I. Bandac, M. Barucci, J. W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, L. Carbone, S. Cebrian, M. Clemenza, O. Cremonesi, R. J. Creswick, A. de Waard, S. Di Domizio, M. J. Dolinski, H. A. Farach, E. Fiorini, G. Frossati, A. Giachero, A. Giuliani, P. Gorla, E. Guardincerri, T. D. Gutierrez, E. E. Haller, R. H. Maruyama, R. J. McDonald, S. Nisi, C. Nones, E. B. Norman, A. Nucciotti, E. Olivieri, M. Pallavicini, E. Palmieri, E. Pasca, M. Pavan, M. Pedretti, G. Pessina, S. Pirro, E. Previtali, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A. R. Smith, L. Torres, G. Ventura, and M. Vignati “Results from a search for the 0 nbb-decay of 130Te,” Phys. Rev. C 78, 035502 (2008).

C. Bihler, M., Kraus, M. S. Brandt, S. T. B. Goennenwein, M. Opel, M. A. Scarpulla, R. Farshchi, D. M. Estrada, and O. D. Dubon, “Suppression of hole-mediated ferromagnetism in Ga1-xMnxP by hydrogen,” J. Appl. Phys. 104, 013908 (2008). 

S.M. Bishop, C.L. Reynolds Jr., Z. Liliental-Weber, Y. Uprety, C.W. Ebert, F.A. Stevie, J.-S. Park, and R.F. Davis, “Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC (1120),” J. Crystal Growth 311(1), 72-8 (2008). 

S. Brotzmann, H. Bracht. J.L. Hansen, A.N. Larsen, E. Simoen, E.E. Haller, J.S. Christensen, and P. Werner, “Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results,” Phys. Rev. B 77, 235207 (2008).

G.F. Brown, J.W. Ager III, W. Walukiewicz, W.J. Schaff, and J. Wu, “Probing and modulating surface electron accumulation in InN by the electrolyte gate Hall effect,” Appl. Phys. Lett. 93, 262105 (2008).

E. Canovas, A. Marti, A. Luque, and W. Walukiewicz, “Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells,” Appl. Phys. Lett. 93, 174109 (2008).

D. Chiba, K.M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, H. Ohno, “Properties of Ga1-xMnxAs with high x (> 0.1),” Proc. of the 52nd Annual Conference on Magnetism and Magnetic Materials, Tampa, FL, Nov. 5-9, 2007; J. Appl. Phys. 103, 07D136 (2008). 

Y.J. Cho, K. M. Yu, X. Liu, W. Walukiewicz, and J. K. Furdyna, “Effects of Donor Doping on properties of Ga1-xMnxAs,” Appl. Phys. Lett. 93, 262505 (2008).

Y.J. Cho, M. A. Scarpulla, Y. Y. Zhou, Z. Ge, X. Liu, M. Dobrowolska, K. M. Yu, O. D. Dubon, and J. K. Furdyna, “Magnetic Anisotropy of Ferromagnetic Ga1-xMnxAs Formed by Mn Ion Implantation and Pulsed-Laser Melting,” J. Appl. Phys. 104, 043902 (2008).

R. Farshchi, O. D. Dubon, D. J. Hwang, N. Misra, C. P. Grigoropoulos, and P. D. Ashby, “Laser activation of ferromagnetism in hydrogenated Ga1-xMnxAs,” Appl. Phys. Lett. 92, 012517 (2008). 

A. Harada, H., Mukuda, Y., Kitaoka, A., Thamizhavel, Y., Okuda, R., Settai, Y., Onuki, K. M., Itoh, E. E., Haller, H., Harima, “Intimate interplay between superconductivity and antiferromagnetism in CeNiGe3 : A 73Ge-NQR study under pressure,” Proceedings of the International Conference on Strongly Correlated Electron Systems, Houston, TX, May 13-18 2007; Physica B 403(5-9), 1022-2 (2008).

A. Harada, H. Mukada, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Onuki, K.M. Itoh, E.E. Haller, and H. Harima, “Evolution of an unconventional superconducting state inside the antiferromagnetic phase of CeNiGe3 under Pressure: a 73Ge-nuclear-quadrupole-resonance study,” J. Phys. Soc. Jpn 77, 103710 (2008). 

M. Hawkridge, D. Cherns, and Z. Liliental-Weber, “Electron irradiation and the equilibrium of open core dislocations in gallium nitride,” phys. stat. sol. (b) 245(5), 903-6 (2008).

D. P. Hickey, Z. L. Bryan, K. S. Jones, R. G. Elliman, E. E. Haller, “Defects in Ge and Si caused by 1 MeV Si+ implantation,” J. Vac. Sci. Technol. B 26(1) 425-9 (2008).

L. Hsu, and W. Walukiewicz, “Modeling of InGaN/Si tandem solar cells,” J. Appl., Phys. 104, 024507 (2008). 

E. Huger, U. Tietze, D. Lott, H. Bracht, D. Bougeard, E.E. Haller, and H. Schmidt, “Self-diffusion in germanium isotope multilayers at low temperatures,” Appl. Phys. Lett. 93, 162104 (2008).

R.E. Jones, R. Broesler, K. M. Yu, J. W. Ager, III, E. E. Haller, W. Walukiewicz, X. Chen, and W. J. Schaff, “Band gap bowing parameter of In1−xAlxN,” J. Appl. Phys. 104, 123501 (2008). 

T. Kim, K. Alberi, O.D. Dubon, M.J. Aziz, and V. Narayanamurti, “Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting,” J. Appl. Phys. 104,113722 (2008).

Z. Liliental-Weber, and D.N. Zakharov, “Defects formed in non-plar GaN grown on SiC and Al2O3 and their reduction in pendeo-epitaxial and laterally overgrown GaN layers,” in Nitrides with Nonpolar Surfaces: Growth, Properties and Devices,” edited by Tanya Paskova, (Wiley-VCH, Wenheim, 2008), pp. 255-86.

Z. Liliental-Weber, X. Ni, and H. Morkoç, “Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions,” J. of Materials Science: Materials in Electronics 19(8-9), 815-20 (2008).

Z. Liliental-Weber, R.L. Maltez, J. Xie, and H. Morkoc, “Propagation of misfit dislocations from AlN/Si interface into Si,” J. Cryst. Growth 310, 3917-23 (2008).

Z. Liliental-Weber, “TEM studies of GaN layers grown in non-polar direction: laterally overgrown and pendeo-epitaxial layers,” J. Cryst. Growth 310, 4011-5 (2008).

Z. Liliental-Weber, M. Hawkridge, J. Mangum, and O.Kryliouk, “InN nanorods and nanowires grown on different substrates,” Proc. 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep. 16-21, 2007; phys. stat. sol (c) 5(6), 1795-8 (2008).

Z.X. Ma, L. Liu, K.M. Yu, W. Walukiewicz, D.L. Perry, P.Y. Yu, and S.S. Mao, “Experimental and theoretical studies on gadolinium doping in ZnTe,” J. Appl. Phys. 103, 023711 (2008). 

N. Miller, R. E. Jones, J. W. Ager, K. M. Yu, P. Flanigan, J. Wu, E. E. Haller, W. Walukiewicz, T. Williamson and M. A. Hoffbauer, “Low-temperature grown compositionally graded InGaN films,” Proc. 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep. 16-21, 2007; phys. stat. sol. (c) 5(6),1866-9 (2008).

J. J. L. Morton, A. M. Tyryshkin, R. M. Brown, S. Shankar, B. W. Lovett, A. Ardavan, T. Schenkel, E. E. Haller, J. W. Ager, and S. A. Lyon, “Solid state quantum memory using the 31P nuclear spin,” Nature 455, 1085 (2008).

M. Naganawa, Y. Shimizu, M. Uematsu, K.M. Itoh, K. Sewano, Y. Shiraki, and E.E. Haller, “Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion,” Appl. Phys. Lett. 93, 191905 (2008).

M. Pedretti, Barucci, M. Risegari, L. Ventura, G. Domizio, S. D. Ottonello, P. Pallavicini, M. Balata, M. A. Giachero, P. Gorla, S. Nisi, E. L. Tatananni, C. Tomei, C. Zarra, E. Andreotti, L. Foggetta, A. Giuliani, C. Salvioni, G. Keppel, P. Menegatti, V. Palmieri, V. Rampazzo, F. Alessandria, C. Arnaboldi, C. Brofferio, S. Capelli, L. Carbone, M. Carrettoni, M. Clemenza, O. Cremonesi, E. Fiorini, L. Gironi, S. Kraft, C. Nones, A. Nucciotti, M. Pavan, G. Pessina, S. Pirro, E. Previtali, D. Schaeffer, M. Sisti, L. Zanotti, R. Ardito, G. Maiern, F. Bellini, C. Cosmelli, I. Dafinei, R. Faccini, F. Ferroni, C. Gargiulo, E. Longo, S. Morganti, M. Olcese, M. Vignati, M. Martinez, J. Beeman, A. Bryant, M. P. Decowski, S. J. Freedman, E. Guardincerri, E. E. Haller, A. R. Smith, N. Xu, M. J. Dolinski, H. Z. Huang, S. Trentalange, C. Whitten T. D. Gutierrez, F. T. Avignone, I. Bandac, R. J. Creswick, H. A. Farach, C. C. Martinez, L. Mizouni, C. Rosenfeld, L. Ejzak, L. Heeger, K. M. Maruyama, S. Sangiorgio, “Cuore experiment: The search for Neutrinoless Double Beta Decay,” Intl. J. Modern Phys. A 23, 21 (2008).

L. A. Reichertz, K. M. Yu, Y. Cui, Z. Liliental-Weber, J. W. Ager, J. W. Beeman, W. Walukiewicz, W. J. Schaff, T. L. Williamson, and M. A. Hoffbauer, “InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates,” AIP Conf. Proc. 1068, 159-64 (2008).

J. T. Robinson and O.D. Dubon, “Ge island assembly on metal-patterned Si: Truncated pyramids, nanorods and beyond,” Journal of Nanoscience and Nanotechnology 8(1), 56-68 (2008).

Y.E. Romanyuk, K.M. Yu, W. Walukiewicz, Z.V. Lavrynyuk, V.I. Pekhnyo, O.V. Parasyuk, “Single crystal growth and properties of g-phase in the CuInSe2+2CdSÛCuInS2+2CdSe reciprocal system,” Solar Energy Materials & Solar Cells 92, 1495–99 (2008). 

A. W. Rushforth, N.R.S. Farley, R.P. Campion, K.W. Edmonds, C.R. Staddon, C.T. Foxon, B.L. Gallagher, and K. M. Yu, “Compositional Dependence of Ferromagnetism in (Al,Ga,Mn)As Magnetic Semiconductors,” Phys. Rev. B 78, 085209 (2008).

M. A. Scarpulla, P.R. Stone, I.D. Sharp, E.E. Haller, O.D. Dubon, J.W. Beeman and K.M. Yu, “Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting,” J. Appl. Phys. 103, 123906 (2008).

M.A. Scarpulla, R. Farshchi, P. R. Stone, R. V. Chopdekar, K. M. Yu, Y. Suzuki, and O. D. Dubon, “Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting,” J. Appl. Phys. 103, 073913 (2008).

G. Siringo, Kreysa, E.; Kovacs, A.; Schuller, F.; Weiss, A.; Esch, W.; Gemund, H.-P.; Jethava, N.; Lundershausen, G.; Gusten, R.; Menten, K.M.; Beelen, A.; Bertoldi, F.; Beeman, J.W.; Haller, E.E.; Colin, A., “The large APEX bolometer camera LABOCA,” SPIE Proc. 7020, 702003 (2008).

P.R. Stone, K. Alberi, S.K.Z. Tardif, J.W. Beeman, K.M. Yu, W. Walukiewicz and O.D. Dubon, “Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism,” Phys. Rev. Lett. 101, 087203 (2008).

P.R. Stone, C. Bihler, M. Kraus, M.A. Scarpulla, J.W. Beeman, K.M. Yu, M.S. Brandt, O.D. Dubon, “Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy,” Phys. Rev B 78, 214421 (2008).

A.L. Syrkin, V. Ivantsov, O. Kovalenkov, A. Usikov, V.A. Dmitriev, Z. Liliental-WeberM.L. Reed, E.D. Readinger, M. Wraback, “First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm,” Proc. 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep. 16-21, 2007; phys. stat. sol (c) 5(6) 1792-4 (2008).

D.E. Trilling, G. Bryden, C. A. Beichman, G. H. Rieke, K. Y. L. Su, J. A. Stansberry, M. Blaylock, K. R. Stapelfeldt, J. W. Beeman, E. E. Haller, “Debris disks around Sun-like stars,” Astrophysical Journal 674(2), 1086-1105 (2008).

W. Walukiewicz, W., K. Alberi, J. Wu, K. M. Yu, and J. W. Ager III, “Electronic Structure of Highly Mismatched Semiconductor Alloys,” in Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, ed. A. Erol (Springer, Berlin, 2008) pp. 65-90.

A. Yang, M. Steger, H.J. Lian, M.L.W. Thewalt, M. Uemura, A. Sagara, K.M. Itoh, E.E. Haller, J.W. Ager, S.A. Lyon, M. Konuma, and M. Cardona, “High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon,” Phys. Rev. B 77, 113203 (2008).

D. O. Yi, M. H. Jhon, I. D. Sharp, Q. Xu, C. W. Yuan, C. Y. Liao, J. W. Ager III, E. E. Haller, and D. C. Chrzan, “Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulations and rate theory,” Phys. Rev. B 78, 245415 (2008).

C. W. Yuan, S. J. Shin, C. Y. Liao, J. Guzman, P. R. Stone, M. Watanabe, J. W. Ager III, E. E. Haller, and D. C. Chrzan, “Structure Map for Embedded Binary Alloy Nanostructures,” Appl. Phys. Lett. 93, 193114 (2008). 

K. M. Yu, M.A. Scarpulla, W. Shan, J. Wu, J.W. Beeman, J.B. Jasinski, Z. Liliental-Weber, O.D. Dubon, and W. Walukiewicz, “Energetic Beam Synthesis of Dilute Nitrides and Related Alloys,” in Dilute III-V Nitride Semiconductors and Materials Systems: Physics and Technology, edited by Ayse Erol, (Springer-Verlag, Berlin-Heidelberg, 2008), Chapter 1.

K. M. Yu, T. Wojtowicz, W.Walukiewicz, X. Liu, and J. K. Furdyna, “Fermi level effects on Mn incorporation in III-Mn-V ferromagnetic semiconductors,” in Semiconductors and Semimetals, Vol. 82, Spintronics, edited by T. Dietl, D. Awschalom, M. Kaminska, and H. Ohno, (Elsevier, 2008).Chapter 3, pp. 89-133.