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2006

J.W. Ager and E. E. Haller, “Isotopically Engineered Semiconductors: From the Bulk to Nanostructures,” phys. stat. sol. (a) 203(14), 3550-58 (2006).

S.P. Beckman and D. C. Chrzan, “Structure and energy of the partial dislocation cores in GaAs,” Phys. Stat. Sol. B 243, 2122 (2006).

A. Chaiken, G. A. Gibson, J. Chen, B. S. Yeh, J. Jasinski, Z. Liliental-Weber, K. Nauka, C. C. Yang, D. D. Lindig, and S. Sivaramakrishnan, “Electron-beam detection of bits reversible recorded on epitaxial InSe/GaSe phase-change diodes,” Jpn. J. Appl. Phys. 45, 2580 (2006).

T. Chung, J.-B. Limb, J.H. Ryou, W. Lee, P. Li, D.W. Yoo, X.B. Zhang, S.C. Shen, R.D. Dupuis, D. Keoqh, P. Asbeck, B. Chukunq, M. Fenq, D. Zakharov, and Z. Liliental-Weber, “Growth of InGaN HBTs by MOCVD,” J. Electron. Mater. 35, 695 (2006).

O. Cremonesi, R. Ardito, C. Arnaboldi, D. R. Artusa, F. T. Avignone, M. Balata, I. Bandac, M. Barucci, J. W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, F. Capozzi, L. Carbone, S. Cebrian, M. Clemenza, C. Cosmelli, R. J. Creswick, I. Dafinei, A. de Waard, M. Dolinski, H. A. Farach, F. Ferroni, E. Fiorini, C. Gargiulo, E. Guardincerri, A. Giuliani, P. Gorla, T. D. Gutierrez, E. E. Haller, I. G. Irastorza, E. Longo, G. Maier, R. Maruyama, S. Morganti, S. Nisi, C. Nones, E. B. Norman, A. Nucciotti, E. Olivieri, P. Ottonello, M. Pallavicini, E. Palmieri, M. Pavan, M. Pedretti, G. Pessina, S. Pirro, E. Previtali, B. Quiter, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A. R. Smith, L. Torres, G. Ventura, N. Xu, L. Zanotti and C. Collaboration, “New Cuoricino Results and Status of Cuore,” Physics of Atomic Nuclei 69 (12), 2083-9 (2006).

O.D. Dubon, M.A. Scarpulla, R. Farshchi, and K.M. Yu, “Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 630 (2006).

R. Farshchi, M. A. Scarpulla, P. R. Stone, K. M. Yu, I. D. Sharp, J. W. Beeman, H. H. Silvestri, L. A. Reichert, E. E. Haller and O. D. Dubon, “Compositional Tuning of Ferromagnetism in Ga1-xMnxP,” Solid State Commun. 140 (9-10), 443-6 (2006).

P. Gorla, F. Alessandria, R. Ardito, C. Arnaboldi, D. R. Artusa, F. T. Avignone, M. Balata, I. Bandac, M. Barucci, J. W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, L. Carbone, S. Cebrian, M. Clemenza, C. Cosmelli, O. Cremonesi, R. J. Creswick, I. Dafinei, S. Di Domizio, M. Diemoz, M. J. Dolinski, H. A. Farach, F. Ferroni, E. Fiorini, S. J. Freedman, C. Gargiulo, A. Giachero, E. Guardincerri, A. Giuliani, T. D. Gutierrez, E. E. Haller, K. Heeger, I. G. Irastorza, E. Longo, G. Maier, R. Maruyama, S. Morganti, S. Nisi, C. Nones, E. B. Norman, A. Nucciotti, P. Ottonello, M. Pallavicini, V. Palmieri, M. Pavan, M. Pedretti, G. Pessina, S. Pirro, E. Previtali, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A. R. Smith, L. Torres, G. Ventura, M. Vignati, N. Xu and L. Zanotti, “New Cuoricino Results on the Way to Cuore,” Physica Scripta T127, 49-51 (2006).

P. Gorla, R. Ardito, C. Arnaboldi, D.R. Artusa, F.T. Avignone, M. Balata, I. Bandac, M. Barucci, J. Beeman, C. Brofferio, C. Bucci, S. Capelli, F. Capozzi, L. Carbone, S. Cebrian, O. Cremonesi, R.J. Creswick, M. Dolinski, A. de Waard, H.A. Farach, F. Ferroni, E. Fiorini, G. Frossati, C. Gargiulo, A. Giuliani, E. Guardincerri, T. Gutierrez, E.E. Haller, I.G. Irastorza, E. Longo, G. Maier, R. Maruyama, R.J. McDonald, S. Morganti, A. Morales, S. Nisi, E.B. Norman, A. Nucciotti, E. Olivieri, P. Ottonello, M. Pallavicini, V. Palmieri, E. Pasca, M. Pavan, M. Pedretti, G. Pessina, S. Pirro, E. Previtali, B. Quiter, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A.R. Smith, Toffanin, L. Torres, G. Ventura, N. Xu, “Cuoricino and CUORE detectors: developing big arrays of large mass bolometers for rare events physics,” Nuclear Physics B – Proceedings Supplements 150, 214-8 (2006).

E. E. Haller, “Germanium: From It’s Discovery to SiGe Devices,” Proc. E-MRS 2006 Spring Meeting, Nice, France May 29-June 3, 2006; Mat. Sci. in Semicond. Processing 9(4-5), 408-22 (2006).

E. E. Haller, “Isotopically Controlled Semiconductors,” MRS Bulletin 31(7), 547 (2006).

A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller and H. Harima, ”Unconventional Superconductivity in the Itinerant Ferromagnet UGe2: 73Ge-NQR Study under Pressure,” Proceedings of the International Conference on Strongly Correlated Electron Systems - SCES 2005, Vienna, Austria, July 26-30, 2005; Physica B 378-380, 963-4 (2006).

R.E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, “Evidence for p-type doping of InN,” Phys. Rev. Lett. 96, 125505 (2006).

R.E. Jones, S. X. Li, L. Hsu, K. M. Yu, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, “Electron Transport Properties of InN,” Mat. Res. Soc. Symp. Proc. 892, FF06-06 (2006).

R.E. Jones, S.X. Li, L. Hsu, K.M. Yu, W. Walukiewicz, Z. Liliental-Weber, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, “Native-defect-controlled n-type conductivity in InN,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 436 (2006).

S. Kawasaki, T. Sada, H. Mukuda, Y. Kitaoka, T. Miyoshi, H. Kotegawa, T.C. Kobayashi, T. Fukuhara, K. Maezawa, K.M. Itoh, and E.E. Haller, “Evidence for Unconventional Superconducting Fluctuations in Heavy-Fermion Compound CeNi2Ge2” J. Phys. Soc. Jpn. 75, 043702 (2006).

R. Klein, Poglitsch, A.; Raab, W.; Geis, N.; Hamidouche, M.; Looney, L.W.; Honle, R.; Schweitzer, M.; Viehhauser, W.; Genzel, R.; Haller, E.E.; Henning, T., “FIFI LS: the far-infrared integral field spectrometer for SOFIA,” SPIE Proc. 6269, 62691F-1-10 (2006).

S.X. Li, R. E. Jones, E. E. Haller, K. M. Yu, W. Walukiewicz, J. W. Ager III, Z. Liliental-Weber, H. Lu, and W. J. Schaff, “Photoluminescence of energetic particle-irradiated InxGa1-xN alloys,” Appl. Phys. Lett. 88, 151101 (2006).

S.X. Li, K.M. Yu, J. Wu, R.E. Jones, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, H. Lu, and W.J. Schaff, “Native defects in InxGa1-xN alloys,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 432 (2006).

K. Lawniczak-Jablonska, I. N. Demchenko, E. Piskorska, A. Wolska, E. Talik, D. N. Zakharov and Z. Liliental-Weber, “Examination of Local Structure of Composite and Low Dimension Semiconductor with X-Ray Absorption Spectroscopy,” Proceedings of the 3rd International Conference on Physics of Disordered Systems (PDS ‘05), Gdansk-Sobieszewo, Poland, September 18-21, 2005; Journal of Non-Crystalline Solids 352 (40-41), 4190-9 (2006).

Z. Liliental-Weber, D. Zakharov, B. Wagner, and R.F. Davis, “TEM studies of laterally overgrown GaN layers grown in polar and non-polar directions,” SPIE Proc. 6121, 612101 (2006).

Z. Liliental-Weber,  T. Tomaszewicz, D. Zakharov, M. O’Keefe, S. Hautakangas, K. Saarinen, and J. A. Freitas, “Atomic Structure of Pyramidal Defects in GaN:Mg; Influence of Annealing,” phys. stat. sol. (a) 203, 1636 (2006).

Z. Liliental-Weber, D.N. Zakharov, K.M. Yu, J.W. Ager III, W. Walukiewicz, E.E. Haller, H. Lu, and W.J. Schaff, “Compositional modulation of InxGa1-xN,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 468 (2006).

Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov, and M.A. O’Keefe, “Discovering a Defect that Imposes a Limit to Mg Doping in p-type GaN,” Microscopy & Micoanalysis 2006 Proceedings, Chicago, IL, July 31-August 2, 2006

X. Ni, Ü. Özgür, Y. Fu, N. Biykli, J. Xie, A.A. Baski, and H. Morkoç, “Defect reduction in (110) a-plane GaN by two-stage epitaxial lateral overgrowth,” Appl. Phys. Lett. 89, 262105 (2006).

V. Pačebutas, G. Aleksejenko, A. Krotkus, J. W. Ager III, W. Walukiewicz, H. Lu, and W. J. Schaff, “Optical bleaching effect in InN epitaxial layers,” Appl. Phys. Lett. 88, 191109 (2006).

S. Pirro, C. Arnaboldi, D.R. Artusa, F.T. Avignone III, M. Balata, I. Bandac, M. Barucci, J.W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, F. Capozzi, L. Carbone, S. Cebrian, M. Clemenza, O. Cremonesi, R.J. Creswick, A. de Waard, M. Dolinski, H.A. Farach, E. Fiorini, G. Frossati, E. Guardincerri, A. Giuliani, P. Gorla, T.D. Gutierrez, E.E. Haller, R. Maruyama, S. Nisi, C. Nones, E.B. Norman, A. Nucciotti, E. Olivieri, M. Pallavicini, V. Palmieri, E. Pasca, M. Pavan, M. Pedretti, G. Pessina, E. Previtali, B. Quiter, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A.R. Smith, L. Torres, G. Ventura, “Further developments in the CUORICINO experiment,” Proceedings of the 11th International Workshop on Low Temperature Detectors - LTD-11, Tokyo, Japan, July 31-August 5 2005; Nucl. Instrum. Methods A 559(2), 352-4 (2006). 

R. Püsche, M. Hundhausen, L. Ley, K. Semmelroth, G. Pensl, P. Desperrier, P.J. Wellmann, E.E. Haller, J.W. Ager, U. Starke, “Electronic Raman Studies of Shallow Donors in Silicon Carbide,” Proc. ICSCRM, Pittsburgh, PA, 9/2005; Materials Science Forum 527-529, 579-84 (2006).

W. Raab, A. Poglitsch, R. Klein, R. Hoenle, M. Schweizer, W.  Viehhauser, N. Geis, R. Genzel, L.W. Looney, M. Hamidouche, T. Henning, and E.E. Haller, “Characterizing the system performance of FIFI LS: the field-imaging far-infrared line spectrometer for SOFIA,” SPIE Proc. 6269, 62691G-1-10 (2006).

J.T. Robinson, O. D., Dubon, J. A. Liddle, A. Minor, and V. Radmilovic, “Morphological evolution of Ge islands patterned on Au-patterned Si,” The 16th American Conference on Crystal Growth and Epitaxy - ACCGE 16, Big Sky, Montana, July 10-15, 2005; J. Cryst. Growth 287, 518 (2006). 

T. Schenkel, J. A. Liddle, A. Persaud, S. J. Park, J. Shangkuan, C. C. Lo, S. Kwon, S. A. Lyon, A. M. Tyryshkin, I. W. Rangelow, D. H. Schneider, J. Ager, and R. de Sousa, “Strategies for integration of donor electron spin qubits in silicon,” Microelectronic Eng. 83, 1814 (2006). 

E.G. Seebauer, K. Dev, M. Y. L. Jung, R. Vaidyanathan, C. T. M. Kwok, J. W. Ager, E. E. Haller, and R. D. Braatz, “Control of Defect Concentrations within a Semiconductor through Adsorption,” Phys. Rev. Lett. 97, 055503 (2006).

W. Shan, W. Walukiewicz, K.M. Yu, J. Wu, J.W. Ager III, and E.E. Haller, “New Development in Dilute Nitride Materials Resaerch,” in III-Nitride Semiconductor Materials, edited by Zhe Chuan Feng (World Scientific, Singapore, 2006). Chapter 12.

I.D. Sharp, Q. Xu, D. O. Yi, C. W. Yuan, J. W. Beeman, K. M. Yu, J. W. Ager, D. C. Chrzan and E. E. Haller, “Structural Properties of Ge Nanocrystals Embedded in Sapphire,” J. Appl. Phys. 100, 114317 (2006).

I.D. Sharp, Q. Xu, D. O. Yi, C. Y. Liao, J. W. Ager III, J. W. Beeman, K. M. Yu, D. C. Chrzan, and E. E. Haller, “A Chemical Approach to 3-D Lithographic Patterning of Ge Nanocrystals,” Mat. Res. Soc. Symp. Proc. 901E, Rb-09-03.1 (2006).

H.H. Silvestri, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, and E. E. Haller, “Diffusion of Silicon in Cristalline Germanium,” Semicond. Sci. Technol. 21, 758 (2006).

P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, E. Erni, and C. Kisielowski, “Zincblende and wurtzite phase in InN epilayers and their respective band transitions,” Proceedings of the Second ONR International Indium Nitride Workshop Kailua-Kona, Hawaii, Jan. 9-13, 2005; J. Crystal Growth 288, 225 (2006).

P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, E. Erni, and C. Kisielowski, “Zincblende and wurtzite phase in InN epilayers and their respective band transitions,” Proceedings of the Second ONR International Indium Nitride Workshop Kailua-Kona, Hawaii, January 9-13, 2005; J. Crystal Growth 288, 225 (2006).

P.R. Stone, M. A. Scarpulla, R. Farshchi, I. D. Sharp, E. E. Haller, O. D. Dubon, K. M. Yu, J. W. Beeman, E. Arenholz, J. D. Denlinger, and H. Ohldag, “Mn L3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP,” Appl. Phys. Lett. 89, 012504 (2006).

L.A. Reichertz, J.W. Beeman, B.L. Cardozo, G. Jakob, R. Katterloher, N.M. Haegel, and E.E. Haller, SPIE Proc. 6275, 62751S-1-8 (2006).

A.M. Tyryshkin, J. J. L. Morton, S. C. Benjamin, A. Ardavan, G. A. D. Briggs, J. W. Ager III, and S. A. Lyon, “Coherence of Spin Qubits in Silicon,” J. Phys. Cond. Mat. 18, S783 (2006).

B.P. Wagner, Z. J. Reitmeier, J. S. Park, D. Bachelor, D. N. Zakharov, Z. Liliental-Weber, and R. F. Davis, “Growth and Characterization of Pendeo-Epitaxial GaN (110) on 4H-SiC(110) Substrates,” J. Cryst. Growth 290(2), 504-12 (2006).

W. Walukiewicz, R.E. Jones, S.X. Li, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, “Dopants and defects in InN and InGaN alloys,” Proceedings of the Second ONR International Indium Nitride Workshop Kailua-Kona, Hawaii, January 9-13,  2005; J. Crystal Growth 288, 278 (2006).

W. Walukiewicz, J. W. Ager III, K. M. Yu, Z. Liliental-Weber, J. Wu, S. X. Li, R. E. Jones, and J. D. Denlinger, “Structure and Electronic Properties of InN and In-rich Group III-Nitride Alloys,” J. Phys. D 39, R83 (2006).

E.R. Weber, Q. Yang, and H. Feick, “Defects related to N-sublattice damage in electron irradiated GaN,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 447 (2006). 

Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M.  Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager III, D. C. Chrzan and E. E. Haller, “Large Melting Point Hysteresis of Ge Nanocrystals Embedded in SiO2,” Phys. Rev. Lett. 97, 155701 (2006). 

A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, J. W. Ager and E. E. Haller, “ Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States,” Phys. Rev. Lett. 97, 227401 (2006).

A. Yang, H. J. Lian, M. L. W. Thewalt, M. Uemura A. Sagara, K. M. Itoh, E. E. Haller, J. W. Ager, and S. A. Lyon, “Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 54 (2006).

K.M. Yu, W. Walukiewicz, J.W. Ager III, D. Bour, R. Farshchi, O.D. Dubon, S.X. Li, I.D. Sharp, and E.E. Haller, “Multiband GaNAsP quaternary alloys,” Appl. Phys. Lett. 88, 092110 (2006).

D.N. Zakharov, Z. Liliental-Weber, Y. Gao, and E. Hu, “Structural defects in Si-doped III-V nitrides,” J. Electron. Mater. 35(7), 1543-6 (2006).