Publications

Electronic Materials Program

2015

327. M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. K. C., M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager III,  X. Zhang, E. Yablonovitch, A. Javey, "Near-Unity Photoluminescence Quantum Yield in MoS2", Science, 350, 1065-1068, 2015. [DOI

326. W. L. Sarney, S. P. Svensson, S. V. Novikov, K. M. Yu, W. Walukiewicz, M. Ting, & C. T. Foxon, (2015). Exploration of the growth parameter space for MBE-grown GaN1−xSbx highly mismatched alloys. Journal of Crystal Growth. [DOI]

325. S. P. Svensson, W. L. Sarney, K. M. Yu, M. Ting, W. L. Calley, S. V. Novikov, C.T. Foxon, & W. Walukiewicz, (2015). Determination of N-/Ga-Rich Growth Conditions, Using In-Situ Auger Electron Spectroscopy. Journal of Crystal Growth. [DOI]

324. M. Ting, R. dos Reis, M. Jaquez, O. D. Dubon, S. S. Mao, K. M. Yu, & W. Walukiewicz, (2015). Electronic band structure of ZnO-rich highly mismatched ZnO1−xTex alloys. Applied Physics Letters106(9), 92101. [DOI]

323. I. Gherasoiu, K. M. Yu, L. Reichertz, & W. Walukiewicz, (2015). InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices. Journal of Crystal Growth. [DOI]

322. C. A. Francis, D. M. Detert, G. Chen, O. D. Dubon,  K. M. Yu, & W. Walukiewicz, (2015). NixCd1−xO: Semiconducting alloys with extreme type III band offsets. Applied Physics Letters106(2), 22110. [DOI]

321. T. Roy, M. Tosun, X. Cao, H. Fang, D.-H. Lien, P. Zhao, Y.-Z. Chen, Y.-L. Chueh, J. Guo, and A. Javey, (2015). Dual-Gated MoS 2 /WSe 2 van der Waals Tunnel Diodes and Transistors. ACS Nano, 9(2), 2071–2079. [DOI]

320. D. -H. Lien, J. S. Kang, M. Amani, K. Chen, M. Tosun, H.-P. Wang, T. Roy, M. S. Eggleston, M. C. Wu, M. Dubey, S.-C. Lee, J.-H. He, A. Javey (2015). Engineering Light Outcoupling in 2D Materials. Nano Letters, 15(2), 1356–1361. [DOI]

319. T. -J. Ha, K. Chen, S. Chuang, K. M. Yu, D. Kiriya, A. Javey, (2015). Highly Uniform and Stable n-Type Carbon Nanotube Transistors by Using Positively Charged Silicon Nitride Thin Films. Nano Letters, 15(1), 392–397. [DOI

2014

318. J. Nishitani, K. M. Yu, & W. Walukiewicz. (2014). Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces. Applied Physics Letters, 105(13), 132103. [DOI]

317. C. Battaglia, S. M. De Nicolás, S. De Wolf, X. Yin, M. Zheng, C. Ballif, & A. Javey. (2014). Silicon heterojunction solar cell with passivated hole selective MoO x contact. Applied Physics Letters, 104, 113902. [DOI

316. Y. Zhou, E. E. Haller, & D. C. Chrzan (2014). Theoretical Prediction of Magnetism in C-doped TlBr. Physical Review B, 89(19), 195201. [DOI

315. P. Lobaccaro, A. Raygani, A. Oriani, N. Miani, A. Piotto, R. Kapadia, A. Javey, (2014). "Electrodeposition of High-Purity Indium Thin Films and Its Application to Indium Phosphide Solar Cells". Journal of the Electrochemical Society, 161(14), D794–D800. [DOI]

314. P. Zhao, D. Kiriya, A. Azcatl, C. Zhang, M. Tosun, Y.-S. Liu, M. Hettick, J. S. Kang, S. McDonnell, S. KC, J. Guo, K. Cho, R. M Wallace, A. Javey. "Air Stable p-Doping of WSe2 by Covalent Functionalization", ACS Nano, 8 (10), 10808-10814, 2014. [DOI

313. K. Chen, D. Kiriya, M. Hettick, M. Tosun, T.-J. Ha, S. R. Madhvapathy, S. Desai, A. Sachid, A. Javey, “Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density”, APL Materials, 2, 092504 (2014). [DOI]

312. S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J. S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, R. M. Wallace, A. Javey, "MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts", Nano Letters, 14 (3), 1337–1342, 2014. [DOI]

311. R. Kapadia, Z. Yu, M. Hettick, J. Xu, M. S. Zheng, C.-Y. Chen, A. D. Balan, D. C. Chrzan, A. Javey, “Deterministic nucleation of InP on metal foils with the thin-film vapor-liquid-solid growth mode”, Chemistry of Materials, 26 (3), 1340–1344, 2014 [DOI]

310. D. Kiriya, M. Tosun, P. Zhao, J. S. Kang, A. Javey. "Air-stable surface charge transfer doping of MoS2 by benzyl viologen", Journal of the American Chemical Society, 136 (22), 7853–7856, 2014. [DOI]

309. M. Tosun, S. Chuang, H. Fang, A. B. Sachid, M. Hettick, Y. Lin, Y. Zeng, A. Javey. "High Gain Inverters Based on WSe2 Complementary Field-Effect Transistors", ACS Nano, 8 (5), 4948–4953, 2014 [DOI]

308. H. Bracht, S. Eon, R. Frieling, A. Plech, D. Issenmann, D. Wolf, J. L. Hansen, A. N. Larsen, J. W. Ager & E. E. Haller, "Thermal conductivity of isotopically controlled silicon nanostructures," New Journal of Physics 16, 015021 (2014). [DOI

307. S. B. Desai, G. Seol, J. S. Kang, H. Fang, C. Battaglia, R. Kapadia, J. W. Ager, J. Guo & A. Javey, "Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2,"Nano Letters , 14(8), 4592–4597 (2014). [DOI

306. T. Roy, M. Tosun,J. S. Kang, A. B. Sachid, S. B. Desai, M. Hettick, C. C. Hu, & A. Javey, (2014). Field-effect transistors built from all two-dimensional material components. ACS Nano8, 6259–6264. [DOI]

305. H. Fang, C Battaglia, C. Carraro, S. Nemsak, B. Ozdol, J. S. Kang, H. A. Bechtel, S. B. Desai, F. Kronast, A. A. Unal, G. Conti, C. Conlon, G. K. Palsson, M. C. Martin, A. M. Minor, C. S. Fadley, E. Yablonovitch, R. Maboudian, A. Javey. "Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides", Proceedings of the National Academy of Sciences (PNAS), 111 (17), 6198-6202, 2014. [DOI

304. D. M. Detert, K. B. Tom, C. Battaglia, J. D. Denlinger, S. H. N. Lim, A. Javey, A. Anders, O. D. Dubon, K. M. Yu & W. Walukiewicz, "Fermi level stabilization and band edge energies in CdxZn1?xO alloys," Journal of Applied Physics 115, (2014). [DOI

303. N. Y. Garces, D. J. Meyer, V. D. Wheeler, Z. Liliental-Weber, D. K. Gaskill & C. R. Eddy, "Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications," Journal of Vacuum Science & Technology B 32, 03D101 (2014). [DOI

302. I. G. Ivanov, M. Yazdanfar, B. Lundqvist, J. T. Chen, J. U. Hassan, P. Stenberg, R. Liljedahl, N. T. Son, J. W. Ager, O. Kordina & E. Janzén, "High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28Si12C, Natural and 13C – Enriched 4H-SiC," Mat. Sci. Forum 778-780, 471 (2014). [DOI

301. E. B. Kandemir, B. Gönül, G. Barkema, K. Yu, W. Walukiewicz & L. Wang, "Modeling of the atomic structure and electronic properties of amorphous GaN1?xAsx ,"Computational Materials Science 82, 100 (2014). [DOI

300. R. Kudrawiec, V. Luce, A. M. Gladysiewicz, M. Ting, J. Kuang, Y. W. Tu, C. D. Dubon, O. M. Yu, K. & W. Walukiewicz, "Electronic Band Structure of GaNxPyAs1-x-y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells," Phys. Rev. Applied 1, 034007 (2014). [DOI

299. Z. Liliental-Weber, R. dos Reis, M. Mancuso, C. Song, I. Grzegory, S. Porowski & M. Bockowski, "Structural defects in bulk GaN," Journal of Crystal Growth , (2014). [DOI

298. S. Novikov, M. Ting, K. Yu, W. Sarney, R. Martin, S. Svensson, W. Walukiewicz & C. Foxon, "Tellurium n-type doping of highly mismatched amorphous GaN1?xAsx alloys in plasma-assisted molecular beam epitaxy ," Journal of Crystal Growth 404, 9 (2014). [DOI

297. J. Suh, D. Fu, X. Liu, J. K. Furdyna, K. M. Yu, W. Walukiewicz & J. Wu, "Fermi-level stabilization in the topological insulatorsBi2Se3 and Bi2Te3: Origin of the surface electron gas," Phys. Rev. B89, 115307 (2014). [DOI

296. T. Tanaka, M. Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K. M. Yu & W. Walukiewicz, "Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer," Photovoltaics, IEEE Journal of 4, 196 (2014). [DOI

295. M. Welna, R. Kudrawiec, Y. Nabetani & W. Walukiewicz, "Band anticrossing in ZnOSe highly mismatched alloy," Applied Physics Express 7, 071202 (2014). [DOI

294. X. Zhang, Z. Yu, C. Wang, D. Zarrouk, J.-W. T. Seo, J. C. Cheng, A. D. Buchan, K. Takei, Y. Zhao, J. W. Ager, J. Zhang, M. Hettick, M. C. Hersam, A. P. Pisano, R. S. Fearing & A. Javey, "Photoactuators and motors based on carbon nanotubes with selective chirality distributions," Nat Commun 5, 2983 (2014). [DOI]

2013

293. N. Ahsan, N. Miyashita, M. Islam, K. M. Yu, W. Walukiewicz & Y. Okada, "Effect of Sb on GaNAs Intermediate Band Solar Cells", IEEE Journal of Photovoltaics 3, 730 (2013). [DOI

292. C. N. Boswell-Koller, S. J. Shin, J. Guzman, M. P. Sherburne, K. C. Bustillo, C. A. Sawyer, J. P. Mastandrea, J. W. Beeman, J. W. Ager, E. E. Haller & D. C. Chrzan, "Interfacial free energies determined from binary embedded alloy nanocluster geometry", APL Materials 1, 052105 (2013). [DOI

291. D. Detert, S. Lim, K. Tom, A. Luce, A. Anders, O. Dubon, K. Yu & W. Walukiewicz, "Crystal structure and properties of CdxZn1-xO alloys across the full composition range",Appl. Phys. Lett. 102, 232103 (2013). [DOI

290. M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz & L. A. Reichertz, "In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications", Journal of Vacuum Science & Technology B 31, 03C114 (2013). [DOI

289. E. B. Kandemir, B. Gönül, G. Barkema, K. Yu, W. Walukiewicz & L. Wang, "Modeling of the atomic structure and electronic properties of amorphous GaN1-xAsx ",Computational Materials Science 82, 100 (2014). [DOI

288. R. Kapadia, Z. Yu, H.-H. H. Wang, M. Zheng, C. Battaglia, M. Hettick, D. Kiriya, K. Takei, P. Lobaccaro, J. W. Beeman, J. W. Ager, R. Maboudian, D. C. Chrzan & A. Javey, "A direct thin-film path towards low-cost large-area III-V photovoltaics", Sci. Rep. 3, 2275 (2013). [DOI

287. Y. J. Kuang, K. M. Yu, R. Kudrawiec, A. V. Luce, M. Ting, W. Walukiewicz & C. W. Tu, "GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy", Appl. Phys. Lett. 102, - (2013). [DOI

286. M. Latkowska, R. Kudrawiec, F. Janiak, M. Motyka, J. Misiewicz, Q. Zhuang, A. Krier & W. Walukiewicz, "Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap", Appl. Phys. Lett. 102, - (2013). [DOI

285. A. Levander, K. Yu, S. Novikov, Z. Liliental-Weber, C. Foxon, O. Dubon, J. Wu & W. Walukiewicz, "Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range", J. Appl. Phys. 113, 243505 (2013). [DOI

284. R.R. Lieten, W.-J. Tseng, K.M. Yu, W. Van de Graaf, J.-P. Locquet, “Single crystalline InxGa1-xN layers on germanium by molecular beam epitaxy,” Cryst. Eng. Comm. 15, 9121 (2013).

283. Z. Liliental-Weber, R. Dos Reis, A. Levander, K. Yu, W. Walukiewicz, S. Novikov & C. Foxon, "Microstructure of GaN1?x Bi x", J. Electron. Mater. 42, 26 (2013). [DOI].

282. Z. Liliental-Weber, R. dos Reis, S. V. Novikov, K. M. Yu, A. X. Levander, O. D. Dubon, J. Wu, W. Walukiewicz1, and C. T. Foxon, “Microstructure of Mg doped GaNAs alloys,”Phys. Status Solidi C 10, No. 3, 453–456 (2013).

281. K. Liu, X. Hong, M. Wu, F. Xiao, W. Wang, X. Bai, J. W. Ager, S. Aloni, A. Zettl, E. Wang & F. Wang, "Quantum-coupled radial-breathing oscillations in double-walled carbon nanotubes", Nat Commun 4, 1375 (2013). [DOI

280. J. P. Mastandrea, M. P. Sherburne, C. N. Boswell-Koller, C. A. Sawyer, J. Guzman, K. C. Bustillo, J. W. Ager, E. E. Haller & D. C. Chrzan, "Self-consistent mean-field theory of size distribution narrowing during ramped temperature ion beam synthesis", J. Appl. Phys. 114, - (2013). [DOI

279. S. V. Novikov, K. M. Yu, A. Levander, D. Detert, W. L. Sarney, Z. Liliental-Weber, M. Shaw, R. W. Martin, S. P. Svensson, W. Walukiewicz & C. T. Foxon, "Molecular beam epitaxy of highly mismatched N-rich GaN1-xSbx and InN1-xAsx alloys", Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures 31, 03C102 (2013). [DOI

278. W. Sarney, S. Svensson, S. Novikov, K. Yu, W. Walukiewicz & C. Foxon, "GaN1-xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions ", Journal of Crystal Growth 383, 95 (2013). [DOI

277. M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, D. O. Scanlon, J. Buckeridge, T. S. Jones, M. J. Ashwin, and T. D. Veal, “Growth and properties of GaSbBi alloys,” Appl. Phys. Lett. 103, 142106 (2013).

276. T. Tanaka, M. Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K. M. Yu & W. Walukiewicz, "Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells", Appl. Phys. Lett. 102, 052111 (2013). [DOI

275. T. Tanaka, Y. Nagao, T. Mochinaga, K. Saito, Q. Guo, M. Nishio, K. M. Yu & W. Walukiewicz, "Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells ", J. Crystal Growth 378, 259 (2013). [DOI

274. K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon-Llado, J. W. Ager, III, W. Walukiewicz & Y. Nanishi, "P-type InGaN across the entire alloy composition range", Appl. Phys. Lett. 102, 102111 (2013). [DOI

273. K. M. Yu, W. L. Sarney, S. V. Novikov, D. Detert, R. Zhao, J. D. Denlinger, S. P. Svensson, O. D. Dubon, W. Walukiewicz & C. T. Foxon, "Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy", Appl. Phys. Lett. 102, - (2013). [DOI]

2012

272. N. Ahsan, N. Miyashita, M. M. Islam, K. M. Yu, W. Walukiewicz, and Y. Okada, “Two-Photon Excitation in an Intermediate Band Solar Cell Structure,” Appl. Phys. Lett100, 172111 (2012).

271. J. M. Atkin, S. Berweger, E. Chavez, M. B. Raschke, J. Cao, W. Fan, J. Wu, "Strain and temperature dependence of the insulating phases of VO2 near the metal-insulator transition," Phys. Rev. B (Rapid Commun.) 85, 020101(R) (2012). 

270. A. Bhatia, W. M. Hlaingoo, G. Siegel, P.R. Stone, K.M. Yu, and M.A. Scarpulla, “Synthesis of Ge1-xSnx Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM),” J. Electron Mater. 41, 837, (2012).

269. D. C. Chrzan, S. J. Shin, J. Guzman, C.-W. Yuan, C. Y. Liao, P. R. Stone, C. N. Boswell-Koller, K. C. Bustillo, M. P. Sherburne, T. Conry, O. D. Dubon, A. M. Minor, M. Watanabe,J. W. Beeman, K. M. Yu, J.W. Ager III  and E. E. Haller, “ Embedded Binary Eutectic Alloy Nanostructures,” J. Mater. Res64, 1158 (2012).

268. Chun Cheng, Wen Fan, Jinbo Cao, Sang-Gil Ryu, Jie Ji, Costas P. Grigoropoulos, and Junqiao Wu, "Heat Transfer across the Interface between Nanoscale Solids and Gas,"ACS Nano 5, 10102 (2011). 

267. M. Dobrowolska, K. Tivakornsasithorn, X. Liu, J.K. Furdyna, M. Berciu, K.M. Yu, and W. Walukiewicz, "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band," Nature Materials 11, 444–449 (2012).

266. Z. Liliental-Weber, R. dos Reis, A. X. Levander, K. M. Yu, W. Walukiewicz, S. V. Novikov, and C. T. Foxon “GaN1-x Asx and GaN1-x Bix Alloys for Solar Cell Application; Structural Studies”, Phys. Stat. Sol C1-4 (2012);

265. Z. Liliental-Weber, R. dos Reis, A. Levander, K.M. Yu, W. Walukiewicz, S.V. Novikov, and C.T. Foxon, “Structural Studies of GaN1-xAsx and GaN1-xBix Alloys for Solar Cell Application,” Phys. Stat. Sol. C9 (7), 1586-9 (2012).

264. T. S. Matthews, C. Sawyer, D. F. Ogletree, Z. Liliental-Weber, D. C. Chrzan, and J. Wu, "Large Reaction Rate Enhancement in Formation of Ultra-Thin AuSi Eutectic Layer,"Phys. Rev. Lett., 108, 096102 (2012).

263. Marius Millot, Zachary M. Geballe, Kin M. Yu, Wladek Walukiewicz, and Raymond Jeanloz, “Red-green luminescence in Indium Gallium Nitride alloys investigated by high pressure optical spectroscopy,” Appl. Phys. Lett.100, 162103 (2012). 

262. Marie A. Mayer, Kin Man Yu, Eugene E. Haller, Wladek Walukiewicz, “Tuning structural, electrical and optical properties of oxide alloys: ZnO1-xSex,” J. Appl. Phys111, 113505 (2012).


261. Marie A. Mayer, Derrick T. Speaks, Jonathan D. Denlinger, Lothar Reichertz, Jeff Beeman, Kin Man Yu, Eugene E. Haller, and Wladek Walukiewicz, “ZnO1-xSex as a photoelectrochemical anodic absorber,” J. Phys. Chem. C116, 15281 (2012).

260. Hari P. Nair, Adam M. Crook, Kin Man Yu, and Seth R. Bank, “Structural and Optical Studies of Nitrogen Incorporation into GaSb-Based InGaSb Quantum Wells,” Appl. Phys. Lett100, 021103 (2012).

259. S. V. Novikov, K. M. Yu, A. X. Levander, Z. Liliental-Weber, R. dos Reis, A. J. Kent, A. Tseng, O. D. Dubon, J. Wu, J. Denlinger, W. Walukiewicz, F. Luckert, P. R. Edwards, R. W. Martin, and C. T. Foxon, “Molecular beam epitaxy of GaN1–xBix alloys withhigh bismuth content,” Phys. Status Solidi 209 (3), 419–423 (2012).

258. M. C. Salvadori, F. S. Teixeira, L. G. Sgubin, W. W. R. Araujo, R. E. Spirin E. M. Oks, K. M. Yu, and I. G. Brown, “Novel, low cost, ion implantation technique,” Appl. Phys. Lett.101, 224104 (2012).

257. M. C. Salvadori,  F. S. Teixeira, M. Cattani, A. Nikolaev, K. P. Savkin, E. M. Oks, L. Phillips, K. M. Yu, and I. G. Brown, “On the electrical conductivity of Ti-implanted alumina,” J. Appl. Phys. 111, 063714 (2012).

256. T. Takahashi, P. Nichols, K. Takei, A.C. Ford, A. Jamshidi, M.C. Wu, C.Z. Ning, and A. Javey, “Contact printing of compositionally graded CdSxSe1-x nanowire parallel arrays for tunable photodetectors,” Nanotechnology 23, 045201 (2012).

255. Tooru Tanaka, Tatsuya Sueishi, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz, “Existence and removal of Cu2Se second phase incoevaporated Cu2ZnSnSe4 thin films,” J. Appl. Phys111, 053522 (2012).

254. Z.-H. Wang, W. Zhang, A.M. Tyryshkin, S.A. Lyon, J.W. Ager, E.E. Haller, and V.V. Dobroviski, "Effect of pulse error accumulation on dynamical decoupling of the electron spins of phosphorus donors in silicon," Phys. Rev. B 85, 085206 (2012).  

253. C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J. L. Morton, and T. Schenkel, “Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28,” Appl. Phys. Lett. 100, 172104 (2012).

252. Kin Man Yu, Marie A. Mayer, Derrick T. Speaks, Hongcai He, Ruying Zhao, L. Hsu, Samuel S. Mao, E. E. Haller, and Wladek Walukiewicz, “Ideal Transparent Conductors for Full Spectrum Photovoltaics,” J. Appl. Phys111, 123505 (2012).

251. Xiaojun Zhang, Kin Man Yu, Coleman Kronawitter, Zhixun Ma, P. Y. Yu, and Samuel S. Mao, “Heavy P-type Doping of ZnSe Thin Films using Cu2Se in Pulsed Laser Deposition,”Appl. Phys. Lett. 101, 042107 (2012).


2011

250. J.W. Ager III and N.R. Miller, “Taming Transport in InN,” European Materials Research Society (E-MRS) 2011 Spring Meeting, Nice, France, May 9-13, 2011; phys. stat. sol (a), published online (Nov. 16, 2011).

249. E. Alarcon-Llado, M.A. Mayer, B.W. Boudouris, R.A. Segalman, N. Miller, T. Yamaguchi, K. Wang, Y. Nanishi, E.E. Haller, and J.W. Ager, “PN junction rectification in electrolyte gated Mg-doped InN,” Appl. Phys. Lett. 99, 102106 (2011). 

248. G. Buchowicz, P.R. Stone, J.T. Robinson, C.D. Cress, J.W. Beeman, and O.D. Dubon, “Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils,” Appl. Phys. Lett. 98, 032102 (2011).

247. I.N. Demchenko, M. Chernyshova, T. Tyliszczak, J.D. Denlinger, K.M. Yu, D.T. Speaks, O. Hemmers, W. Walukiewicz, G. Derkachov, and K. Lawniczak-Jablonska, “Electronic structure of CdO studied by soft X-ray spectroscopy,” J. Electron Spectrosc. Relat. Phenom. 184(3-6), 249-53 (2011).

246. B. Ellis, M.A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E.E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nature Photonics 5(5), 297-300 (2011).

245. F. Gao, K.M. Yu, R.J. Mendelsberg, A. Anders, and W. Walukiewicz, “Preparation of high transmittance ZnO:Al film by pulsed filtered cathodic arc technology and rapid thermal annealing,” Appl. Surf. Sci. 257(15), 7019-22 (2011).

244. I. Gherasoiu, L.A. Reichertz, K.M. Yu, J.W. Ager III, V.M. Kao, and W. Walukiewicz, "Photovoltaic action from InxGa1-xN p-n junctions with x > 0.2 grown on silicon," International Workshop on Nitride Semiconductors (IWN2010), Tampa, FL, Sep. 19-24, 2010; phys. stat. sol. (c) 8(7-8), 481-3 (2011).

243. J. Guzman, C.N. Boswell-Koller, J.W. Beeman, K.C. Bustillo, T. Conry, O.D. Dubon, W.L. Hansen, A.X. Levander, C.Y. Liao, R.R. Lieten, C.A. Sawyer, M.P. Sherburne, S.J. Shin, P.R. Stone, M. Watanabe, K.M. Yu, J.W. Ager III, D.C. Chrzan, and E.E. Haller, “Reversible phase changes in Ge-Au nanoparticles,” Appl. Phys. Lett. 98, 193101 (2011).

242. D.R. Khanal, A.X. Levander, K.M. Yu, Z. Liliental-Weber, W. Walukiewicz, J. Grandal, M.A. Sanchez-Garcia, E. Calleja, and J. Wu, "Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering," J. Appl. Phys. 110, 033705 (2011).

241. A.X. Levander, S.V. Novikov, Z. Liliental-Weber, R. dos Reis, O.D. Dubon, J. Wu, C.T. Foxon, K.M. Yu, and W. Walukiewicz, “Doping of GaN1-xAsx with high As content,” J. Appl. Phys. 110, 093702 (2011).

240. A.X. Levander, Z. Liliental-Weber, R. Broesler, M.E. Hawkridge, S.V. Novikov, C.T. Foxon, O.D. Dubon, J. Wu, W. Walukiewicz, and K.M. Yu, “Thermal stability of amorphous GaN1-xAsx alloys,” Appl. Phys. Lett. 98 161902 (2011).

239. A.X. Levander, T. Tong, K.M. Yu, J. Suh, D. Fu, R. Zhang, H. Lu, W.J. Schaff, O. Dubon, W. Walukiewicz, D.G. Cahill, and J. Wu, “Effects of point defects on thermal and thermoelectric properties of InN,” Appl. Phys. Lett. 98, 012108 (2011).

238. R.R. Lieten, V.V. Afanas’ev, N.H. Thoan, S. Degroote, W. Walukiewicz, and G. Borghs, “Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4Interlayers,” J. Electrochem. Soc. 158(4) G358-G362 (2011).

237. Z. Liliental-Weber, D.F. Ogletree, K.M. Yu, M. Hawkridge, J.Z. Domagala, J. Bak-Misiuk, A.E. Berman, A. Emara, and S. Bedair, “Structural defects and cathodoluminescence in InxGa1-xN layers,” International Workshop on Nitride Semiconductors (IWN2010), Tampa, FL, Sep. 19-24, 2010; phys. stat. sol. (c) 8(7-8), 2248-50 (2011).

236. N. Lopez, L.A. Reichertz, K.M. Yu, K. Campman, and W. Walukiewicz, “Engineering the Electronic Band Structure for Multiband Solar Cells,” Phys. Rev. Lett. 106, 028701 (2011).

235. M.A Mayer, S. Choi, O. Bierwagen, H.M. Smith III, E.E. Haller, J.S. Speck and W. Walukiewicz, “Electrical and optical properties of p-type InN,” J. Appl. Phys. 110, 123707 (2011).

234. N. Miller, E.E. Haller, G. Koblmüller, C. Gallinat, J.S. Speck, W.J. Schaff, M.E. Hawkridge, K.M. Yu, and J.W. Ager III, “Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN,” Phys. Rev. B 84, 075315 (2011).

233. M. Millot, N. Ubrig, J.M. Poumirol, I. Gherasoiu, W. Walukiewicz, S. George, O. Portugall, J. Leotin, M. Goiran, and J.M. Broto, “Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy,” Phys. Rev. B 83, 125204 (2011).

232. S. Nie, J.M. Wofford, N.C. Bartelt, O.D. Dubon, and K.F. McCarty, “Origin of the mosaicity in graphene grown on Cu(111),” Phys. Rev. B 84, 155425 (2011).

231. S.V. Novikov, C.R. Staddon, C.T. Foxon, K.M. Yu, R. Broesler, M. Hawkridge, Z. Liliental-Weber, J. Denlinger, I. Demchenko, F. Luckert, P.R. Edwards, R.W. Martin, and W. Walukiewicz, “Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices,” 16thInternational Conference on Molecular Beam Epitaxy (ICMBE), Berlin, Germany, Aug. 22-27, 2010; J. Cryst. Growth 323(1), 60-3 (2011).

230. C.L. Pint, K. Takei, R. Kapadia, M. Zheng, A.C. Ford, J. Zhang, A. Jamshidi, R. Bardhan, J.J. Urban, M. Wu, J.W. Ager, M.M. Oye and A. Javey, “Rationally Designed, Three-Dimensional Carbon Nanotube Black-Contacts for Efficient Solar Devices,” Advanced Energy Materials 1, 1040 (2011).

229. T. Takahashi, K. Takei, A.G. Gillies, R.S. Fearing, and A. Javey, “Carbon Nanotube Active-Matrix Backplanes for Conformal Electronics and Sensors,” Nano Lett. 11, 5408 (2011).

228. K. Takei, H. Fang, S.B. Kumar, R. Kapadia, Q. Gao, M. Madsen, H.S. Kim, C.-H. Liu, Y.-L. Chueh, E. Plis, S. Krishna, H.A. Bechtel, J. Guo, and A. Javey, “Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes,” Nano Lett. 11, 5008 (2011).

227. K. Takei, S. Chuang, H. Fang, R. Kapadia, C.-H. Liu, J. Nah, H.S. Kim, E. Plis, S. Krishna, Y.-L. Chueh, and A. Javey, “Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness,” Appl. Phys. Lett. 99, 103507 (2011).

226. T. Tanaka, K.M. Yu, A.X. Levander, O.D. Dubon, L.A. Reichertz, N. Lopez, N. Mitsuhiro, and W. Walukiewicz, "Demonstration of ZnTe1-xOx Intermediate Band Solar Cell," Jpn. J. Appl. Phys. 50, 082304 (2011).

225. C.A. Sawyer, J. Guzman, C.N. Boswell-Koller, M.P. Sherburne, J.P. Mastandrea, K.C. Bustillo, J.W. Ager III, E.E. Haller, and D.C. Chrzan, “Modeling pulsed-laser melting of embedded semiconductor nanoparticles,” J. Appl. Phys. 110, 094307 (2011).

224. G. Shambat, B. Ellis, M.A. Mayer, A. Majumdar, E.E. Haller, and J. Vuckovic, “Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator,” Optics Express 19(8), 7530-6 (2011).

223. K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M.A. Mayer, T. Araki, Y. Nanishi, K.M. Yu, E.E. Haller, W. Walukiewicz, and J.W. Ager III, “Mg doped InN and confirmation of free holes in InN,” Appl. Phys. Lett. 98, 042104 (2011).

222. T.E. Winkler, P. R. Stone, Tian Li, K. M. Yu, A. Bonanni, and O. D. Dubon, “Compensation-dependence of magnetic and electric properties in Ga1-xMnxP,” Appl. Phys. Lett.98, 012103 (2011).

221. J.M. Wofford, S. Nie, K.F. McCarty, N.C. Bartelt, C. Norman, and O.D. Dubon, “Graphene Islands on Cu Foils: The Interplay between Shape, Orientation, and Defects,” Nano Lett. 10(12), 4890-6 (2011).

220. K.M. Yu, S.V. Novikov, R. Broesler, A.X. Levander, Z. Liliental-Weber, F. Luckert, R.W. Martin, O. Dubon, J. Wu, W. Walukiewicz, and C.T. Foxon, "GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates," International Workshop on Nitride Semiconductors (IWN2010), Tampa, FL, Sep. 19-24, 2010; phys. stat. sol. (c) 8(7-8), 2503-5 (2011).


2010

219. E. Abe, A. M. Tyryshkin, S. Tojo, J. J. L. Morton, W. M. Witzel, A. Fujimoto, J. W. Ager, E. E. Haller, J. Isoya, S. A. Lyon, M. L. W. Thewalt and K. M. Itoh, "Electron Spin Coherence of Phosphorus Donors in Silicon: Effect of Environmental Nuclei," Phys. Rev. B 82, 121201(R)  (2010).

218. G.F. Brown, J. W. Ager, W. Walukiewicz and J. Wu, "Finite Element Simulations of Compositionally Graded InGaN Solar Cells," Solar Energy Materials and Solar Cells 94, 3, 478-483 (2010).

217. Y. L. Chueh, C. N. Boswell, C. W. Yuan, S. J. Shin, K. Takei, J. C. Ho, H. Ko, Z. Y. Fan, E. E. Haller, D. C. Chrzan and A. Javey, "Nanoscale Structural Engineering Via Phase Segregation: Au-Ge System," Nano Lett. 10, 2, 393-397 (2010).

216. Y. L. Chueh, Z. Y. Fan, K. Takei, H. Ko, R. Kapadia, A. A. Rathore, N. Miller, K. Yu, M. Wu, E. E. Haller and A. Javey, "Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays," Nano Lett. 10, 2, 520-523 (2010).

215. I. N. Demchenko, J. D. Denlinger, M. Chernyshova, K. M. Yu, D. T. Speaks, P. Olalde-Velasco, O. Hemmers, W. Walukiewicz, A. Derkachova and K. Lawniczak-Jablonska, "Full Multiple Scattering Analysis of Xanes at the Cd L3 and O K Edges in CdO Films Combined with a Soft-X-Ray Emission Investigation," Phys. Rev. B 82, 075107 (2010).

214. B. Ellis, T. Sarmiento, M. Mayer, B. Y. Zhang, J. Harris, E. Haller and J. Vuckovic, "Electrically Pumped Photonic Crystal Nanocavity Light Sources Using a Laterally Doped p-i-n Junction," Appl. Phys. Lett. 96, 181103  (2010).

213. I. Gherasoiu, K.M. Yu, L.A. Reichertz, V.M. Kao, M. Hawkridge, J.W. Ager, and W. Walukiewicz, “High quality InxGa1-xN thin films with x > 0.2 grown on silicon,” phys. stat. sol (b) 247(7), 1747-9 (2010).

212. M. Goiran, M. Millot, J. M. Poumirol, I. Gherasoiu, W. Walukiewicz and J. Leotin, "Electron Cyclotron Effective Mass in Indium Nitride," Appl. Phys. Lett. 96, 052117  (2010);erratum, Appl. Phys. Lett. 98, 079903 (2011).

211. E.E. Haller, "Physics with Isotopically Controlled Semiconductors," Semiconductors 44, 7, 841-853 (2010).

210. T. Kim, M. R. Pillai, M. J. Aziz, M. A. Scarpulla, O. D. Dubon, K. M. Yu, J. W. Beeman and M. C. Ridgway, "Heat Flow Model for Pulsed Laser Melting and Rapid Solidification of Ion Implanted GaAs," J. Appl. Phys. 108, 013508 (2010).

209. D. Lackner, M. Martine, Y. T. Cherng, M. Steger, W. Walukiewicz, M. L. W. Thewalt, P. M. Mooney and S. P. Watkins, "Electrical and Optical Characterization of n-InAsSb/n-GaSb Heterojunctions," J. Appl. Phys. 107, 014512 (2010).

208. A.X. Levander, K.M. Yu, S.V. Novikov, A. Tseng, C.T. Foxon, O.D. Dubon, J. Wu, and W. Walukiewicz, “GaN1-xBix: Extremely mismatched semiconductor alloys,” Appl. Phys. Lett. 97, 141919 (2010).

207. Z. Liliental-Weber, "Extended Defects in III-Nitrides and Their Origin," J. Cryst. Growth 312, 18, 2599-2606 (2010).

206. Z. Liliental-Weber, M. E. Hawkridge, X. Wang and A. Yoshikawa, "Structural Differences in P-Doped InN; Indication of Polytypism " phys. stat. sol (c) 7, 7-8, 2025-2028 (2010).

205. S.D. Lounis, D. A. Siegel, R. Broesler, C. G. Hwang, E. E. Haller and A. Lanzara, "Resonant Photoluminescent Charging of Epitaxial Graphene," Appl. Phys. Lett. 96, 151913,  (2010).

204. M.A. Mayer, P. R. Stone, N. Miller, H. M. Smith, O. D. Dubon, E. E. Haller, K. M. Yu, W. Walukiewicz, X. Liu and J. K. Furdyna, "Electronic Structure of Ga1-xMnxAs Analyzed According to Hole-Concentration-Dependent Measurements," Phys. Rev. B 81, 045205 (2010).

203. M.A. Mayer, D. T. Speaks, K. M. Yu, S. S. Mao, E. E. Haller and W. Walukiewicz, "Band Structure Engineering of ZnO1-xSex Alloys," Appl. Phys. Lett. 97, 022104 (2010).

202. N. Miller, J. W. Ager, H. M. Smith, M. A. Mayer, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmuller and J. S. Speck, "Hole Transport and Photoluminescence in Mg-Doped InN," J. Appl. Phys. 107, 113712 (2010).

201. S. V. Novikov, C. R. Staddon, C. T. Foxon, K. M. Yu, R. Broesler, J. Denlinger, I. Demchenko, Z. Liliental-Weber and W. Walukiewicz, "Molecular Beam Epitaxy of GaNAs Alloys with High As Content for Potential Photoanode Applications in Hydrogen Production," J. Vac. Sci. Technol. 28, 3, C3B12-C3B16 (2010).

200. J. Olea, K. M. Yu and W. Walukiewicz, "Hall Mobilities in GaNxAs1-x," phys. stat. sol. (c) 7, 7-8, 1890-1893 (2010).

199. F. Reurings, C. Rauch, F. Tuomisto, R.E. Jones, K.M. Yu, W. Walukiewicz, and W.J. Schaff, “Defect redistribution in postirradiation rapid-thermal-annealed InN,” Phys. Rev. B 82, 153202 (2010).

198. F. Reurings, F. Tuomisto, W. Egger, B. Löwe, L. Ravelli, S. Sojak, Z. Liliental-Weber, R. E. Jones, K. M. Yu, W. Walukiewicz and W. J. Schaff, "Irradiation-Induced Defects in InN and GaN Studied with Positron Annihilation," phys. stat. sol (a) 207, 5, 1087-1090 (2010).

197. S.J. Shin, J. Guzman, C. W. Yuan, C. Y. Liao, C. N. Boswell-Koller, P. R. Stone, O. D. Dubon, A. M. Minor, M. Watanabe, J. W. Beeman, K. M. Yu, J. W. Ager, D. C. Chrzan and E. E. Haller, "Embedded Binary Eutectic Alloy Nanostructures: A New Class of Phase Change Materials," Nano Lett. 10, 8, 2794-2798 (2010).

196. D.T. Speaks, M. A. Mayer, K. M. Yu, S. S. Mao, E. E. Haller and W. Walukiewicz, "Fermi Level Stabilization Energy in Cadmium Oxide," J. Appl. Phys. 107, 113706 (2010).

195. P.R. Stone, L. Dreher, J. W. Beeman, K. M. Yu, M. S. Brandt and O. D. Dubon, "Interplay of Epitaxial Strain and Perpendicular Magnetic Anisotropy in Insulating Ferromagnetic Ga1-xMnxP1-yNy," Phys. Rev. B 81, 205210 (2010).

194. T. Tanaka, K. M. Yu, P. R. Stone, J. W. Beeman, O. D. Dubon, L. A. Reichertz, V. M. Kao, M. Nishio and W. Walukiewicz, "Demonstration of Homojunction Znte Solar Cells," J. Appl. Phys. 108, 024502 (2010).

193. R.Y. Wang, J. P. Feser, X. Gu, K. M. Yu, R. A. Segalman, A. Majumdar, D. J. Milliron and J. J. Urban, "A Universal and Solution-Processable Precursor to Bismuth Chalcogenide Thermoelectrics," Chemistry of Materials 22, 1943-1945 (2010).

192. K.M. Yu, S. V. Novikov, R. Broesler, Z. Liliental-Weber, A. X. Levander, V. M. Kao, O. D. Dubon, J. Wu, W. Walukiewicz and C. T. Foxon, "Low Gap Amorphous GaN1-xAsxAlloys Grown on Glass Substrate," Appl. Phys. Lett. 97, 101906 (2010).

191. K.M. Yu, S. V. Novikov, R. Broesler, C. R. Staddon, M. Hawkridge, Z. Liliental-Weber, I. Demchenko, J. D. Denlinger, V. M. Kao, F. Luckert, R. W. Martin, W. Walukiewicz and C. T. Foxon, "Non-Equilibrium GaNAs alloys with Band Gap Ranging from 0.8-3.4 eV," phys. stat. sol. (c) 7, 7-8, 1847-1849 (2010).


2009

190. G. Acbas, M.-H. Kim, M. Cukr, V. Novak, M.A. Scarpulla, O.D.  Dubon, T. Jungwirth, J. Sinova, and J. Cerne, “Electronic structure of ferromagnetic semiconductor Ga1xMnxAs probed by subgap magneto-optical spectroscopy,” Phys. Rev. Lett. 103, 137201 (2009).

189. S. Ahlers, P. R. Stone, N. Sircar, E. Arenholz, O. D. Dubon and D. Bougeard, "Comparison of the Magnetic Properties of Gemn Thin Films through Mn L-Edge X-Ray Absorption," Appl. Phys. Lett. 95, 151911 (2009).

188. R. Broesler, E. E. Haller, W. Walukiewicz, T. Muranaka, T. Matsumoto and Y. Nabetani, "Temperature Dependence of the Band Gap of ZnSe1-xOx," Appl. Phys. Lett. 95, 151907  (2009).

187. C.-H. Chen, K.M. Yu, and W. Walukiewicz, “Optical properties of ion beam synthesized nitrogen-rich GaN1-xAs,” phys. stat. sol (c) 6(S2), S796-S799 (2009). 

186. R. Farshchi, D. J. Hwang, N. Misra, C. C. Julaton III, K. M. Yu, C. P. Grigoropoulos, and O. D. Dubon, “Structural, magnetic, and transport properties of laser-annealed GaAs:Mn–H,” J. Appl. Phys. 106, 013904 (2009).

185. R. Farshchi, D. J. Hwang, R. V. Chopdekar, P. D. Ashby, C. P. Grigoropoulos and O. D. Dubon, "Ultrafast Pulsed-Laser Dissociation of Mn-H Complexes in GaAs," J. Appl. Phys. 106, 103918  (2009).

184. J. Guzman, S. J. Shin, C. Y. Liao, C. W. Yuan, P. R. Stone, O. D. Dubon, K. M. Yu, J. W. Beeman, M. Watanabe, J. W. Ager, D. C. Chrzan and E. E. Haller, "Photoluminescence Enhancement of Er-Doped Silica Containing Ge Nanoclusters," Appl. Phys. Lett. 95, 201904  (2009).

183. M. E. Hawkridge, Z. Liliental-Weber, K. M. Yu, L. A. Reichertz, W. J. Schaff, J. W. Ager, and W. Walukiewicz, “Stacking faults and phase changes in Mg-doped InGaN grown on Si,” phys. stat. sol. (c) 6(S2), S421-S424 (2009).

182. M.E. Hawkridge,  Z. Liliental-Weber, H. J. Kim, S. Choi, D. Yoo, J.-H. Ryou and R. D. Dupuis, “Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth,” Appl. Phys. Lett. 94, 171912 (2009).

181. R. E. Jones, S. X. Li, K. M. Yu, J. W. Ager III, E. E. Haller, W. Walukiewicz, H. Lu, and W. J. Schaff, “Properties of Native Point Defects in In1-xAlxN Alloys,” J. Phys. D: Appl. Phys. 42(7), 095406 (2009). 

180. D. R. Khanal, W. Walukiewicz, J. Grandal, E. Calleja and J. Wu, "Determining Surface Fermi Level Pinning Position of InN Nanowires Using Electrolyte Gating," Appl. Phys. Lett. 95, 173114  (2009).

179. Z. Liliental-Weber, K. M. Yu, M. Hawkridge, S. Bedair, A. E. Berman, A. Emara, J. Domagala and J. Bak-Misiuk, "Structural Perfection of InGaN Layers and Its Relation to Photoluminescence," phys. stat. sol. (c) 6, 12, 2626-2631 (2009).

178. Z. Liliental-Weber, K.M. Yu, M. Hawkridge, S. Bedair, A.E. Berman, A. Emara, J. Domagala,and J. Bak-Misiuk, “Spontaneous stratification of InGaN layers and its influence on optical properties,” phys. stat. sol. (c) 6(S2), S433-S436 (2009).

177. Z.X. Ma, K.M. Yu, W. Walukiewicz, P.Y. Yu, and S.S. Mao, “Strain relaxation of CdTe films growing on lattice-mismatched substrates,” Appl. Phys. A 96(2), 379-84 (2009).

176. N. Miller, J. W. Ager III, R. E. Jones, H. M. Smith III, M. A. Mayer, K. M. Yu, M. E. Hawkridge, Z. Liliental-Weber, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmüller and J. S. Speck, "Electrical and Electrothermal Transport in InN: The Roles of Defects," Physica B: Condens. Matt. 404, 23-24, 4862-4865 (2009).

175. S. Miyamoto, O. Moutanabbir, E.E. Haller, and K.M. Itoh, “Spatial correlation of self-assembled isotopically pure Ge/Si (001) nanoislands,” Phys. Rev. B 79, 165415 (2009). 

174. S.V. Novikov, C. R. Staddon, A. V. Akimov, R. P. Campion, N. Zainal, A. J. Kent, C. T. Foxon, C-H Chen, K. M. Yu, W. Walukiewicz, “Molecular beam epitaxy GaN layers with high As content,” J. Cryst. Growth 311, 3417–22 (2009). 

173. H. Pan, N. Misra, S.H. Ko, C. P. Grigoropoulos, N. Miller, E.E. Haller, and O. Dubon, “Melt-mediated coalescence of solution-deposited ZnO nanoparticles by excimer laser annealing for thin-film transistor fabrication,” Appl. Phys. A 94(1), 111-5  (2009).

172. L.A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz and J. W. Ager, "Demonstration of a III-Nitride/Silicon Tandem Solar Cell," Appl. Phys. Exp., 2, 122202  (2009).

171. J.T. Robinson, A. Rastelli, O. Schmidt, O.D. Dubon, “Global faceting behavior of strained Ge islands on Si,” Nanotechnology 20, 085708 (2009).

170. Y.E. Romanyuk, D. Kreier, Y. Cui, K. M. Yu, J. W. Ager and S. R. Leone, "Molecular Beam Epitaxy of InGaN Thin Films on Si(111): Effect of Substrate Nitridation," Thin Solid Films 517, 24, 6512-6515 (2009).

169. J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager III, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, and D. Bougeard, “A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure,” phys. stat. sol. RRL 3(2-3), 61-3 (2009)

168. F. Schmid, K. Semmelroth, M. Krieger, H.B. Weber, G. Pensl, and E.E. Haller, “Ionization energies of phosphorus donors in 6H-SiC,” Mat. Sci. Forum 600-603, 441-4 (2009). 

167. Q. Song, K. H. Chow, R. I. Miller, I. Fan, M. D. Hossain, R. F. Kiefl, S. R. Kreitzman, C. D. P. Levy, T. J. Parolin, M. R. Pearson, Z. Salman, H. Saadaoui, M. Smadella, D. Wang, K. M. Yu, X. Liu, J. K. Furdyna, W. A. MacFarlane, “Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn,” Physica B 404, 892 (2009). 

166. M. Steger, A. Yang, D. Karaiskaj, M. L. W. Thewalt, E. E. Haller, J. W. Ager III, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, and H.-J. Pohl, “Shallow impurity absorption spectroscopy in isotopically enriched silicon,”  Phys. Rev. B 79, 205210 (2009). 

165. M. Steger, A. Yang, M.L.W. Thewalt, M. Cardona, H. Riemann, N.V. Abrosimov, M.F. Churbanov, A.V. Gusev, A.D. Bulanov, I.D. Kovalev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.-J. Pohl, E.E. Haller, J.W. Ager, “High-resolution absorption spectroscopy of the deep impurities S and Se in 28Si revealing the 77Se hyperfine splitting,” Phys. Rev. B 80, 115204 (2009). 

164. T.L. Williamson, M. A. Hoffbauer, K. M. Yu, L. A. Reichertz, M. E. Hawkridge, R. E. Jones, N. Miller, J. W. Ager III, Z. Liliental-Weber, and W. Walukiewicz, “Highly luminescent InxGa1-xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE),” phys. stat. sol. (c) 6(S2), S409-S412 (2009). 

163. A. Yang, M. Steger, T. Sekiguchi, M.L.W. Thewalt, J.W.  Ager, and E.E. Haller, “Homogeneous linewidth of the 31P bound exciton transition in silicon,” Appl. Phys. Lett. 95, 122113 (2009).  

162. A. Yang, M. Steger, T. Sekiguchi, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, J. W. Ager and E. E. Haller, "Single-Frequency Laser Spectroscopy of the Boron Bound Exciton in 28Si," Phys. Rev. B 80, 195203 (2009).

161. C.W. Yuan, D. O. Yi, I. D. Sharp, S. J. Shin, C. Y. Liao, J. Guzman, J. W. Ager, E. E. Haller and D. C. Chrzan, "Size-Distribution Evolution of Ion-Beam-Synthesized Nanoclusters in Silica," Phys. Rev. B 80, 134121 (2009).

160. C.W. Yuan, C. N. Boswell, S. J. Shin, C. Y. Liao, J. Guzman, J. W. Ager, III, E. E. Haller, and D. C. Chrzan, “Processing route for size distribution narrowing of ion beam synthesized nanoclusters,” Appl. Phys. Lett. 95, 083120 (2009).

159. C.W. Yuan, D. O. Yi, I. D. Sharp, S. J. Shin, C. Y. Liao, J. Guzman, J. W. Ager, III, E. E. Haller, and D. C. Chrzan, “Theory of Nanocluster Size Distributions from Ion Beam Synthesis,” Phys. Rev. Lett. 102, 146101 (2009).

158. K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz and C. T. Foxon, "Highly Mismatched Crystalline and Amorphous Ga1-xAsAlloys in the Whole Composition Range," J. Appl. Phys. 106, 103709 (2009).

157. Y.Y. Zhou, X. Liu, J. K. Furdyna, M. A. Scarpulla and O. D. Dubon, "Ferromagnetic Resonance Investigation of Magnetic Anisotropy in Ga1-xMnxAs Synthesized by Ion Implantation and Pulsed Laser Melting," Phys. Rev. B 80, 224403 (2009).

2008

156. J. W. Ager, N. Miller, R.E. Jones, K.M. Yu, J. Wu, W.J. Schaff, W. Walukiewicz, “Mg-doped InN and InGaN – photoluminescence, capacitance-voltage and thermopower measurements,” phys. stat. sol. (b) 245(5), 873-7 (2008).

155. K. Alberi, J. Blacksberg, L.D. Bell, S. Nikzad, K.M. Yu, O.D. Dubon, and W. Walukiewicz, “Band anticrossing in highly mismatched SnxGe1-x semiconducting alloys,” Phys. Rev. B 77, 073202 (2008).

154. K. Alberi, O.D. Dubon, W. Walukiewicz, K.M. Yu, J.A. Gupta, and J.M. Baribeau, “Composition dependence of the hole mobility in GaSbxAs1-x,” Appl. Phys. Lett. 92, 162105 (2008).

153. K. Alberi, K.M. Yu, P.R. Stone, O.D. Dubon, W. Walukiewicz, X. Liu, and J. K. Furdyna, “The formation of a Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing,” Phys. Rev. B 78, 075201 (2008).

152. F.Z. Amir, K. Clark, E. Maldonado, W.P. Kirk, J.C. Jiang, J.W. Ager, K.M. Yu, and W. Walukiewicz, “Epitaxial growth of CdSexTe1-x thin films on Si(100) by molecular beam epitaxy using lattice mismatch graded structures,” J. Cryst. Growth 310, 1081-7 (2008).

151. C. Arnaboldi, D. R. Artusa, F. T. Avignone III, M. Balata, I. Bandac, M. Barucci, J. W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, L. Carbone, S. Cebrian, M. Clemenza, O. Cremonesi, R. J. Creswick, A. de Waard, S. Di Domizio, M. J. Dolinski, H. A. Farach, E. Fiorini, G. Frossati, A. Giachero, A. Giuliani, P. Gorla, E. Guardincerri, T. D. Gutierrez, E. E. Haller, R. H. Maruyama, R. J. McDonald, S. Nisi, C. Nones, E. B. Norman, A. Nucciotti, E. Olivieri, M. Pallavicini, E. Palmieri, E. Pasca, M. Pavan, M. Pedretti, G. Pessina, S. Pirro, E. Previtali, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A. R. Smith, L. Torres, G. Ventura, and M. Vignati “Results from a search for the 0 nbb-decay of 130Te,” Phys. Rev. C 78, 035502 (2008).

150. C. Bihler, M., Kraus, M. S. Brandt, S. T. B. Goennenwein, M. Opel, M. A. Scarpulla, R. Farshchi, D. M. Estrada, and O. D. Dubon, “Suppression of hole-mediated ferromagnetism in Ga1-xMnxP by hydrogen,” J. Appl. Phys. 104, 013908 (2008). 

149. S.M. Bishop, C.L. Reynolds Jr., Z. Liliental-Weber, Y. Uprety, C.W. Ebert, F.A. Stevie, J.-S. Park, and R.F. Davis, “Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC (1120),” J. Crystal Growth 311(1), 72-8 (2008). 

148. S. Brotzmann, H. Bracht. J.L. Hansen, A.N. Larsen, E. Simoen, E.E. Haller, J.S. Christensen, and P. Werner, “Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results,” Phys. Rev. B 77, 235207 (2008).

147. G.F. Brown, J.W. Ager III, W. Walukiewicz, W.J. Schaff, and J. Wu, “Probing and modulating surface electron accumulation in InN by the electrolyte gate Hall effect,” Appl. Phys. Lett. 93, 262105 (2008).

146. E. Canovas, A. Marti, A. Luque, and W. Walukiewicz, “Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells,” Appl. Phys. Lett. 93, 174109 (2008).

145. D. Chiba, K.M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, H. Ohno, “Properties of Ga1-xMnxAs with high x (> 0.1),” Proc. of the 52nd Annual Conference on Magnetism and Magnetic Materials, Tampa, FL, Nov. 5-9, 2007; J. Appl. Phys. 103, 07D136 (2008). 

144. Y.J. Cho, K. M. Yu, X. Liu, W. Walukiewicz, and J. K. Furdyna, “Effects of Donor Doping on properties of Ga1-xMnxAs,” Appl. Phys. Lett. 93, 262505 (2008).

143. Y.J. Cho, M. A. Scarpulla, Y. Y. Zhou, Z. Ge, X. Liu, M. Dobrowolska, K. M. Yu, O. D. Dubon, and J. K. Furdyna, “Magnetic Anisotropy of Ferromagnetic Ga1-xMnxAs Formed by Mn Ion Implantation and Pulsed-Laser Melting,” J. Appl. Phys. 104, 043902 (2008).

142. R. Farshchi, O. D. Dubon, D. J. Hwang, N. Misra, C. P. Grigoropoulos, and P. D. Ashby, “Laser activation of ferromagnetism in hydrogenated Ga1-xMnxAs,” Appl. Phys. Lett.92, 012517 (2008). 

141. A. Harada, H., Mukuda, Y., Kitaoka, A., Thamizhavel, Y., Okuda, R., Settai, Y., Onuki, K. M., Itoh, E. E., Haller, H., Harima, “Intimate interplay between superconductivity and antiferromagnetism in CeNiGe3 : A 73Ge-NQR study under pressure,” Proceedings of the International Conference on Strongly Correlated Electron Systems, Houston, TX, May 13-18 2007; Physica B 403(5-9), 1022-2 (2008).

140. A. Harada, H. Mukada, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Onuki, K.M. Itoh, E.E. Haller, and H. Harima, “Evolution of an unconventional superconducting state inside the antiferromagnetic phase of CeNiGe3 under Pressure: a 73Ge-nuclear-quadrupole-resonance study,” J. Phys. Soc. Jpn 77, 103710 (2008). 

139. M. Hawkridge, D. Cherns, and Z. Liliental-Weber, “Electron irradiation and the equilibrium of open core dislocations in gallium nitride,” phys. stat. sol. (b) 245(5), 903-6 (2008).

138. D. P. Hickey, Z. L. Bryan, K. S. Jones, R. G. Elliman, E. E. Haller, “Defects in Ge and Si caused by 1 MeV Si+ implantation,” J. Vac. Sci. Technol. B 26(1) 425-9 (2008).

137. L. Hsu, and W. Walukiewicz, “Modeling of InGaN/Si tandem solar cells,” J. Appl., Phys. 104, 024507 (2008). 

136. E. Huger, U. Tietze, D. Lott, H. Bracht, D. Bougeard, E.E. Haller, and H. Schmidt, “Self-diffusion in germanium isotope multilayers at low temperatures,” Appl. Phys. Lett. 93, 162104 (2008).

135. R.E. Jones, R. Broesler, K. M. Yu, J. W. Ager, III, E. E. Haller, W. Walukiewicz, X. Chen, and W. J. Schaff, “Band gap bowing parameter of In1−xAlxN,” J. Appl. Phys. 104, 123501 (2008). 

134. T. Kim, K. Alberi, O.D. Dubon, M.J. Aziz, and V. Narayanamurti, “Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting,” J. Appl. Phys. 104,113722 (2008).

133. Z. Liliental-Weber, and D.N. Zakharov, “Defects formed in non-plar GaN grown on SiC and Al2O3 and their reduction in pendeo-epitaxial and laterally overgrown GaN layers,” in Nitrides with Nonpolar Surfaces: Growth, Properties and Devices,” edited by Tanya Paskova, (Wiley-VCH, Wenheim, 2008), pp. 255-86.

132. Z. Liliental-Weber, X. Ni, and H. Morkoç, “Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions,” J. of Materials Science: Materials in Electronics 19(8-9), 815-20 (2008).

131. Z. Liliental-Weber, R.L. Maltez, J. Xie, and H. Morkoc, “Propagation of misfit dislocations from AlN/Si interface into Si,” J. Cryst. Growth 310, 3917-23 (2008).

130. Z. Liliental-Weber, “TEM studies of GaN layers grown in non-polar direction: laterally overgrown and pendeo-epitaxial layers,” J. Cryst. Growth 310, 4011-5 (2008).

129. Z. Liliental-Weber, M. Hawkridge, J. Mangum, and O.Kryliouk, “InN nanorods and nanowires grown on different substrates,” Proc. 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep. 16-21, 2007; phys. stat. sol (c) 5(6), 1795-8 (2008).

128. Z.X. Ma, L. Liu, K.M. Yu, W. Walukiewicz, D.L. Perry, P.Y. Yu, and S.S. Mao, “Experimental and theoretical studies on gadolinium doping in ZnTe,” J. Appl. Phys. 103, 023711 (2008). 

127. N. Miller, R. E. Jones, J. W. Ager, K. M. Yu, P. Flanigan, J. Wu, E. E. Haller, W. Walukiewicz, T. Williamson and M. A. Hoffbauer, “Low-temperature grown compositionally graded InGaN films,” Proc. 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep. 16-21, 2007; phys. stat. sol. (c) 5(6),1866-9 (2008).

126. J. J. L. Morton, A. M. Tyryshkin, R. M. Brown, S. Shankar, B. W. Lovett, A. Ardavan, T. Schenkel, E. E. Haller, J. W. Ager, and S. A. Lyon, “Solid state quantum memory using the 31P nuclear spin,” Nature 455, 1085 (2008).

125. M. Naganawa, Y. Shimizu, M. Uematsu, K.M. Itoh, K. Sewano, Y. Shiraki, and E.E. Haller, “Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion,” Appl. Phys. Lett. 93, 191905 (2008).

124. M. Pedretti, Barucci, M. Risegari, L. Ventura, G. Domizio, S. D. Ottonello, P. Pallavicini, M. Balata, M. A. Giachero, P. Gorla, S. Nisi, E. L. Tatananni, C. Tomei, C. Zarra, E. Andreotti, L. Foggetta, A. Giuliani, C. Salvioni, G. Keppel, P. Menegatti, V. Palmieri, V. Rampazzo, F. Alessandria, C. Arnaboldi, C. Brofferio, S. Capelli, L. Carbone, M. Carrettoni, M. Clemenza, O. Cremonesi, E. Fiorini, L. Gironi, S. Kraft, C. Nones, A. Nucciotti, M. Pavan, G. Pessina, S. Pirro, E. Previtali, D. Schaeffer, M. Sisti, L. Zanotti, R. Ardito, G. Maiern, F. Bellini, C. Cosmelli, I. Dafinei, R. Faccini, F. Ferroni, C. Gargiulo, E. Longo, S. Morganti, M. Olcese, M. Vignati, M. Martinez, J. Beeman, A. Bryant, M. P. Decowski, S. J. Freedman, E. Guardincerri, E. E. Haller, A. R. Smith, N. Xu, M. J. Dolinski, H. Z. Huang, S. Trentalange, C. Whitten T. D. Gutierrez, F. T. Avignone, I. Bandac, R. J. Creswick, H. A. Farach, C. C. Martinez, L. Mizouni, C. Rosenfeld, L. Ejzak, L. Heeger, K. M. Maruyama, S. Sangiorgio, “Cuore experiment: The search for Neutrinoless Double Beta Decay,” Intl. J. Modern Phys. A 23, 21 (2008).

123. L. A. Reichertz, K. M. Yu, Y. Cui, Z. Liliental-Weber, J. W. Ager, J. W. Beeman, W. Walukiewicz, W. J. Schaff, T. L. Williamson, and M. A. Hoffbauer, “InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates,” AIP Conf. Proc. 1068, 159-64 (2008).

122. J. T. Robinson and O.D. Dubon, “Ge island assembly on metal-patterned Si: Truncated pyramids, nanorods and beyond,” Journal of Nanoscience and Nanotechnology 8(1), 56-68 (2008).

121. Y.E. Romanyuk, K.M. Yu, W. Walukiewicz, Z.V. Lavrynyuk, V.I. Pekhnyo, O.V. Parasyuk, “Single crystal growth and properties of g-phase in the CuInSe2+2CdSÛCuInS2+2CdSe reciprocal system,” Solar Energy Materials & Solar Cells 92, 1495–99 (2008). 

120. A. W. Rushforth, N.R.S. Farley, R.P. Campion, K.W. Edmonds, C.R. Staddon, C.T. Foxon, B.L. Gallagher, and K. M. Yu, “Compositional Dependence of Ferromagnetism in (Al,Ga,Mn)As Magnetic Semiconductors,” Phys. Rev. B 78, 085209 (2008).

119. M. A. Scarpulla, P.R. Stone, I.D. Sharp, E.E. Haller, O.D. Dubon, J.W. Beeman and K.M. Yu, “Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting,” J. Appl. Phys. 103, 123906 (2008).

118. M.A. Scarpulla, R. Farshchi, P. R. Stone, R. V. Chopdekar, K. M. Yu, Y. Suzuki, and O. D. Dubon, “Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting,” J. Appl. Phys. 103, 073913 (2008).

117. G. Siringo, Kreysa, E.; Kovacs, A.; Schuller, F.; Weiss, A.; Esch, W.; Gemund, H.-P.; Jethava, N.; Lundershausen, G.; Gusten, R.; Menten, K.M.; Beelen, A.; Bertoldi, F.; Beeman, J.W.; Haller, E.E.; Colin, A., “The large APEX bolometer camera LABOCA,” SPIE Proc. 7020, 702003 (2008).

116. P.R. Stone, K. Alberi, S.K.Z. Tardif, J.W. Beeman, K.M. Yu, W. Walukiewicz and O.D. Dubon, “Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism,” Phys. Rev. Lett. 101, 087203 (2008).

115. P.R. Stone, C. Bihler, M. Kraus, M.A. Scarpulla, J.W. Beeman, K.M. Yu, M.S. Brandt, O.D. Dubon, “Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy,” Phys. Rev B 78, 214421 (2008).

114. A.L. Syrkin, V. Ivantsov, O. Kovalenkov, A. Usikov, V.A. Dmitriev, Z. Liliental-WeberM.L. Reed, E.D. Readinger, M. Wraback, “First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm,” Proc. 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, Sep. 16-21, 2007; phys. stat. sol (c) 5(6) 1792-4 (2008).

113. D.E. Trilling, G. Bryden, C. A. Beichman, G. H. Rieke, K. Y. L. Su, J. A. Stansberry, M. Blaylock, K. R. Stapelfeldt, J. W. Beeman, E. E. Haller, “Debris disks around Sun-like stars,” Astrophysical Journal 674(2), 1086-1105 (2008).

112. W. Walukiewicz, W., K. Alberi, J. Wu, K. M. Yu, and J. W. Ager III, “Electronic Structure of Highly Mismatched Semiconductor Alloys,” in Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, ed. A. Erol (Springer, Berlin, 2008) pp. 65-90.

111. A. Yang, M. Steger, H.J. Lian, M.L.W. Thewalt, M. Uemura, A. Sagara, K.M. Itoh, E.E. Haller, J.W. Ager, S.A. Lyon, M. Konuma, and M. Cardona, “High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon,” Phys. Rev. B 77, 113203 (2008).

110. D. O. Yi, M. H. Jhon, I. D. Sharp, Q. Xu, C. W. Yuan, C. Y. Liao, J. W. Ager III, E. E. Haller, and D. C. Chrzan, “Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulations and rate theory,” Phys. Rev. B 78, 245415 (2008).

109. C. W. Yuan, S. J. Shin, C. Y. Liao, J. Guzman, P. R. Stone, M. Watanabe, J. W. Ager III, E. E. Haller, and D. C. Chrzan, “Structure Map for Embedded Binary Alloy Nanostructures,” Appl. Phys. Lett. 93, 193114 (2008). 

108. K. M. Yu, M.A. Scarpulla, W. Shan, J. Wu, J.W. Beeman, J.B. Jasinski, Z. Liliental-Weber, O.D. Dubon, and W. Walukiewicz, “Energetic Beam Synthesis of Dilute Nitrides and Related Alloys,” in Dilute III-V Nitride Semiconductors and Materials Systems: Physics and Technology, edited by Ayse Erol, (Springer-Verlag, Berlin-Heidelberg, 2008), Chapter 1.

107. K. M. Yu, T. Wojtowicz, W.Walukiewicz, X. Liu, and J. K. Furdyna, “Fermi level effects on Mn incorporation in III-Mn-V ferromagnetic semiconductors,” in Semiconductors and SemimetalsVol. 82Spintronicsedited by T. Dietl, D. Awschalom, M. Kaminska, and H. Ohno, (Elsevier, 2008).Chapter 3, pp. 89-133.

2007

106. G. Acbas, J. Sinova, M. A. Scarpulla, O. D. Dubon, M. Cukr, V. Novak and J. Cerne, “Comparison of the Mid-Infrared Magneto-Optical Response of Ga1-xMnxAs films Grown by Molecular Beam Epitaxy and Ion Implantation and Pulsed Laser Melting,” Proc. Fourth International School and Conference on Spintronics and Quantum Information Technology (Spintech IV), Maui, HI, June 17-22, 2007; Journal of Superconductivity and Novel Magnetism 20(6), 457-60 (2007).  

105. J. W. Ager III, R.E. Jones, K.M. Yu, W. Walukiewicz, D. M. Yamaguchi, S.X. Li, E.E. Haller, H. Lu and W.J. Schaff, “Evidence for p-type InN,” Proceedings of 28th International Conference on the Physics of Semiconductors, Vienna, Austria July 24-28, 2006; AIP Conf. Proc. 893, 343 (2007).

104. J. W. Ager, R. E. Jones, D. M. Yamaguchi, K. M. Yu, W. Walukiewicz, S. X. Li, E. E. Haller, H. Lu and W. J. Schaff, “P-Type InN and in-Rich InGaN," phys. stat. sol. (b) 244 (6), 1820-4 (2007).

103. K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis and A. Krotkus, “Valence Band Anticrossing in GaBixAs1-x,” Appl. Phys. Lett. 91, 051909 (2007).

102. K. Alberi, J. Wu, W. Walukiewicz, K. M. Yu, O. D. Dubon, S. P. Watkins, C. X. Wang, X. Liu, Y. J. Cho and J. Furdyna, “Valence-Band Anticrossing in Mismatched III-V Semiconductor Alloys,” Phys. Rev. B 75, 045203 (2007).

101. S.P. Beckman, and D. C. Chrzan, “Reconstruction energies of partial dislocations in cubic semiconductors,” Phys. Rev. B 76, 14410 (2007). 


100. J.W. Beeman, S. Goyal, L.A. Reichertz, and E. E. Haller “Ion-implanted Ge:B far-infrared blocked-impurity-band detectors,” Infrared Phys. Technol. 51(1), 60-5 (2007).


99. C. Bihler, M. Kraus, H. Heubl, M.S. Brandt, S.T.B. Goennenwein, M. Opel, M.A. Scarpulla, P.R. Stone, R. Farshchi, and O.D. Dubon, “Magnetocrystalline anisotropy and magnetization reversal in Ga1−xMnxP synthesized by ion implantation and pulsed-laser melting,” Phys. Rev. B 75, 214419 (2007).


98. S.M. Bishop, C.L. Reynolds, Z. Liliental-Weber, Y. Uprety, J. Zhu, D. Wang, J.C. Molstad, D.E. Barnhardt, A. Shrivastava, T.S. Sudarshan, and R.F. Davis, “Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [110] and [0001]-oriented silicon carbide substrates,” J. Electron. Mater. 36(4), 285-96 (2007).


97. S.M. Bishop, J.-S. Park, J. Gu, B.P. Wagner, Z.J. Reitmeier, D.A. Batchelor, D.N. Zakharov, Z. Liliental-Weber, and R.F. Davis, “Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (1120),” Proc. First International Symposium on Growth of Nitrides (ISGN-1),  Linköping, Sweden, June 4-7, 2006; J. Cryst. Growth 300(1), 83-9 (2007)

96. H. Bracht, H. H. Silvestri, I. D. Sharp and E. E. Haller, “Self- and Foreign-Atom Diffusion in Semiconductor Isotope Heterostructures. II. Experimental Results for Silicon,”Phys. Rev. B 75 (3), 035211 (2007).

95. S.S. Bui, H. P. Lee, and K. M. Yu, “Metamorphic InAsyP1−y (y=0.30–0.75) and AldIn1−dAsyP1−y buffer layers on InP substrates", Appl. Phys. Lett. 90, 212113 (2007).

94. Y.J. Cho, X. Liu, Y.Y. Zhou, O.D. Dubon, and J.K. Furdyna, “Magnetic Cluster Phases of Mn-Interstitial-Free (Ga,Mn)As,” Proceedings of 28th International Conference on the Physics of Semiconductors, Vienna, Austria July 24-28, 2006; AIP Conf. Proc. 893, 1221 (2007).

93. O.D. Dubon, J.T. Robinson, Y. Cao, and J. A. Liddle, “Programming the Shape of Highly Ordered Ge Islands on Si: From Dots to Rods,” Proceedings of 28th International Conference on the Physics of Semiconductors, Vienna, Austria July 24-28, 2006; AIP Conf. Proc. 893, 37 (2007).

92. R. Farshchi, P. D. Ashby, D. J. Hwang, C. P. Grigoropoulos, R. V. Chopdekar, Y. Suzuki, O.D. Dubon, “Hydrogen patterning of Ga1-xMnxAs for planar spintronics,” Proc. ICDS-24, Albuquerque, NM, July 22-27, 2007; Physica B 401-2, 447 (2007).

91. K. D. Gordon, C. W. Engelbracht, D. Fadda, J. Stansberry, S. Wachter, D. T. Frayer, G. Rieke, A. Noriega-Crespo, W. B. Latter, E. Young, G. Neugebauer, Z. Balog, J. W. Beeman, H. Dole, E. Egami, E. E. Haller, D. Hines, D. Kelly, F. Marleau, K. Misselt, J. Morrison, P. Perez-Gonzalez, J. Rho and W. A. Wheaton, “Absolute Calibration and Characterization of the Multiband Imaging Photometer for Spitzer. II. 70 µm Imaging,” Publications of the Astronomical Society of the Pacific 119 (859), 1019-1037 (2007).

90. A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima, “Experimental evidence for ferromagnetic spin-pairing superconductivity emerging in UGe2: A 73Ge-nuclear-quadrupole-resonance study under pressure,” Phys. Rev. B 75, 140502 (2007).

89. A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Onuki, K. M. Itoh, E. E. Haller and H. Harima, "Pressure-Induced Antiferromagnetic Superconductivity in CeNiGe3: A 73Ge-NQR Study under Pressure", Proceedings of the 17th International Conference on Magnetism, Aug. 20-25, 2006, Kyoto, Japan; Journal of Magnetism and Magnetic Materials 310(2), 614-6 (2007).

88. D. P. Hickey, Z. L. Bryan, K. S. Jones, R. G. Elliman and E. E. Haller, “Regrowth-Related Defect Formation and Evolution in 1 MeV Amorphized (001) Ge," Appl. Phys. Lett. 90, 132114 (2007).

87. L. Hsu, R.E. Jones, S.X. Li, K.M. Yu, and W. Walukiewicz, “Electron mobility in InN and III-N alloys,” J. Appl. Phys. 102, 024507 (2007).

86. R.E. Jones, S. X. Li, E. E. Haller, H. C. M. van Genuchten, K. M. Yu, J. W. Ager, Z. Liliental-Weber, W. Walukiewicz, H. Lu and W. J. Schaff, “High Electron Mobility InN,” Appl. Phys. Lett. 90, 162103 (2007).

85. R.E. Jones, K.M. Yu, H.C.M. van Genuchten, W. Walukiewicz, S.X. Li, J.W. Ager III, Z. Liliental-Weber, E.E. Haller, H. Lu and W.J. Schaff, “Defect doping of InN,” Proceedings of 28th International Conference on the Physics of Semiconductors, Vienna, Austria July 24-28, 2006; AIP Conf. Proc. 893, 213-4 (2007).

84. S. Kawasaki, T. Sada, T. Miyoshi, H. Kotegawa, H. Mukuda, Y. Kitaoka, T. C. Kobayashi, T. Fukuhara, K. Maezawa, K. M. Itoh and E. E. Haller, “73Ge-NQR Study of Heavy-Fermion Compound CeNi2Ge2,” Proceedings of the 17th International Conference on Magnetism, Aug. 20-25, 2006, Kyoto, Japan; Journal of Magnetism and Magnetic Materials 310 (2), 590-592 (2007).

83. D.R. Khanal, J.W.L. Yim, W. Walukiewicz and J. Wu, “Effects of Quantum Confinement on the Doping Limit of Semiconductor Nanowires,” Nano Lett. 7(5), 1186-90 (2007).

82. M.-H. Kim, G. Acbas, M.-H. Yang, I. Ohkubo, H. Christen, D. Mandrus, M. A. Scarpulla, O. D. Dubon, Z. Schlesinger, P. Khalifah, and J. Cerne, “Determination of the infrared complex magnetoconductivity tensor in itinerant ferromagnets from Faraday and Kerr measurements,” Phys. Rev B 75, 214416 (2007).

81. Z. Liliental-Weber, H.C.M. van Genuchten, K.M. Yu, W. Walukiewicz, W. Ager III, E.E. Haller, H. Lu and W.J. Schaff, “TEM Studies of as-Grown, Irradiated and Annealed InN Films,” Proc. ICDS-24, Albuquerque, NM, July 22-27, 2007; Physica B 401-2, 649 (2007).

80. Z. Liliental-Weber, W.J. Schaff, O. Kryliouk, H.J. Park, J. Mangum, and T. Anderson, "Comparison of Structural Perfection of InN Layers and InN Nanorods Grown on C- and R-Planes Al2O3,” phys. stat. sol. (c) 7, 2469-2473 (2007).

79. Z. Liliental-Weber, H.J. Park, J. Mangum, and T. Anderson, “Transmission Electron Microscopy Study of Inn Nanorods,” Proceedings of 28th International Conference on the Physics of Semiconductors, Vienna, Austria July 24-28, 2006; AIP Conf. Proc. 893, 111 (2007).

78. Z.X. Ma, K.M. Yu, L. Liu, L. Wang, D.L. Perry, W. Walukiewicz, and S.S. Mao, “Copper-doped CdTe films with improved hole mobility,” Appl. Phys. Lett. 91, 092113 (2007).

77. X. Ni, Ü. Özgür, H. Morkoç, Z. Liliental-Weber, and H.O. Everitt, “Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition,” J. Appl. Phys. 102, 053506 (2007).

76. X. Ni, U. Ozgur, H. Morkoc, A.A. Baski, Z. Liliental-Weber, and H.O. Everitt, “Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD,” SPIE Proc. 6473, 647303 (2007).

75. V. Pačebutas, K. Bertulis, L. Dapkus, G. Aleksejenko, A. Krotkus, K. M. Yu, and W. Walukiewicz, “Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers,” Semicond. Sci. Technol 22, 819-23 (2007).

74. M. Pedretti, F. Alessandria, R. Ardito, C. Arnaboldi, F.T. Avignone III, M. Balata, I. Bandac, M. Barucci, J.W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, L. Carbone, S. Cebrian, M. Clemenza, C. Cosmelli, S. Cuneo, O. Cremonesi, R.J. Creswick, I. Dafinei, S. Di Domizio, S. Diemoz, M.J. Dolinskitn, H.A.Farach, F. Ferroni, E. Fiorini, L. Foggetta, S.J. Freedmann, C. Gargiulo, A. Giachero, E. Guardincerri, A. Giuliani, P. Gorla, T.D. Gutierrez, E.E. Haller, K.M. Heeger, I. G. Irastorza, Yu.G.Kolomenski, E. Longo, G. Maier, R. Maruyama, C. Martinez, S. Morganti, S. Nisi, C. Nones, E.B. Norman, A. Nucciotti, M. Olcese, P. Ottonello, M. Pallavicini, E. Palmieri, M. Pavan, G. Pessina, S. Pirro, G. Pessina, E. Previtali, L. Risegari, C. Rosenfeld, C. Salvioni, S. Sangiorgio, M. Sisti, A.R. Smith, L. Torres, G. Ventura, M. Vignati, N. Xu, C. Zarra and L. Zanotti, “An active-shield method for the reduction of surface contamination in CUORE,” Proc. Topical Workshop on Low Radioactivity Techniques: LRT 2006, Aussois, France, Oct. 1-4 2006; AIP Conf. Proc. 897(1), 59-64 (2007).

73. J. Plesiewicz, T. Suski, L. Dmowski, W. Walukiewicz, K. M. Yu, A. Korman, R. Ratajczak, A. Stonert, H. Lu, W. Schaff, “Towards identification of localized donor states in InN,” Semicond. Sci. Technol 22, 1161-4 (2007).

72. J.T. Robinson, P. G. Evans, J. A. Liddle and O. D. Dubon, “Chemical Nanomachining of Silicon by Gold-Catalyzed Oxidation,” Nano Lett. 7(7), 2009-13 (2007).

71. J.T. Robinson, F. Ratto, O. Moutanabbir, S. Heun, A. Locatelli, T. O. Mentes, L. Aballe and O. D. Dubon, “Gold-Catalyzed Oxide Nanopatterns for the Directed Assembly of Ge Island Arrays on Si,” Nano Lett. 7(9), 2655-9 (2007).

70. J.T. Robinson, D. A. Walko, D. A. Arms, D. S. Tinberg, P. G. Evans, Y. Cao, J. A. Liddle, A. Rastelli, O. G. Schmidt and O. D. Dubon, “Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods,” Phys. Rev. Lett. 98, 106102 (2007).

69. J.T. Robinson, Y. Cao, D. Walko, D. Arms, J.A. Liddle, and O.D. Dubon, “Ordering and shape tuning of Ge islands on metal-patterned Si,” Mat. Res. Soc. Symp. Proc. 958, 81-6 (2007).

68. I.D. Sharp, Q. Xu, C. W. Yuan, J. W. Beeman, J. W. Ager, D. C. Chrzan and E. E. Haller, “Kinetics of Visible Light Photo-Oxidation of Ge Nanocrystals: Theory and in Situ Measurement,” Appl. Phys. Lett. 90, 163118 (2007).

67. I.D. Sharp, Q. Xu, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager III, D. C. Chrzan, and E. E. Haller, “Melting Kinetics of Confined Systems at the Nanoscale: Superheating and Supercooling,” Proceedings of 28th International Conference on the Physics of Semiconductors, Vienna, Austria July 24-28, 2006; AIP Conf. Proc. 893, 191-2 (2007).

66. I.D. Sharp, Q. Xu, C.W. Yuan, J.W. Ager III, D.C. Chrzan, E.E. Haller, “Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy,” Mat. Res. Soc. Proc. Vol. 958, 87-92 (2007).

65. J.A. Stansberry, K. D. Gordon, B. Bhattacharya, C. W. Engelbracht, G. H. Rieke, F. R. Marleau, D. Fadda, D. T. Frayer, A. Noriega-Crespo, S. Wachter, E. T. Young, T. G. Muller, D. M. Kelly, M. Blaylock, D. Henderson, G. Neugebauer, J. W. Beeman and E. E. Haller, “Absolute Calibration and Characterization of the Multiband Imaging Photometer for Spitzer. III. An Asteroid-Based Calibration of MIPS at 160 µm,” Publications of the Astronomical Society of the Pacific 119 (859), 1038-1051 (2007).

64. M. Steger, A. Yang, M.L.W. Thewalta M. Cardona, H. Riemann, N.V. Abrosimov, M.F. Churbanov, A.V. Gusev, A.D. Bulanov, I.D. Kovalev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.-J. Pohl, J.W. Ager III and E.E. Haller “Impurity absorption spectroscopy of the deep double donor sulfur in isotopically enriched silicon,” Proc. ICDS-24, Albuquerque, NM, July 22-27, 2007; Physica B 401-2, 600 (2007).

P.R. Stone, J. W. Beeman, K. M. Yu, O. D. Dubon, “Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors,” Proc. ICDS-24, Albuquerque, NM, July 22-27, 2007; Physica B 401-2, 454 (2007).

63. P.R. Stone, R. Farshchi, I.D. Sharp, J.W. Beeman, K.M. Yu, E. Arenholz, J. Denlinger, E.E. Haller, and O.D. Dubon, "Mn L3,2 X-Ray Absorption Spectroscopy and Magnetic Circular Dichroism in Ferromagnetic Ga1-xMnxP," Proceedings of 28th International Conference on the Physics of Semiconductors, Vienna, Austria July 24-28, 2006; AIP Conf. Proc. 893, 1177 (2007).

62. K. Sunder, H. Bracht, S. P. Nicols and E. E. Haller, “Zinc and Gallium Diffusion in Gallium Antimonide,” Phys. Rev. B 75, 245210 (2007).

61. M.L.W. Thewalt, A. Yang, M. Steger, D. Karaiskaj, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, E. E. Haller, J. W. Ager and K. M. Itoh, “Direct Observation of the Donor Nuclear Spin in a near-Gap Bound Exciton Transition: 31P in Highly Enriched 28Si,” J. Appl. Phys. 101, 081724 (2007).

60. M.L.W. Thewalt, M., Steger, A., Yang, N., Stavrias, M., Cardona, H., Riemann, N. V., Abrosimov, M. F., Churbanov, A. V., Gusev, A. D., Bulanov, I. D., Kovalev, A. K., Kaliteevskii, O. N., Godisov, P., Becker, H.-J., Pohl, J.W. Ager III, E.E. Haller, “Can highly enriched 28Si reveal new things about old defects?,” Proc. ICDS-24, Albuquerque, NM, July 22-27, 2007; Physica B 401-2, 587 (2007).

59. F. Tuomisto, A. Pelli, K. M. Yu, W. Walukiewicz and W. J. Schaff, “Compensating Point Defects in 4He+-Irradiated InN," Phys. Rev. B 75, 193201 (2007).

58. J.L. Weyher, S. Lazar, L. Macht, Z. Liliental-Weber, R.J. Molnar, S. Müller, V.G.M. Sivel, G. Nowak and I. Grzegory, “Orthodox etching of HVPE-grown GaN,” Proceedings of the 4th International Workshop on Bulk Nitride Semiconductors IV, Makino, Shiga, Japan, Oct. 16-22, 2006; J. Cryst. Growth 305(2), 384-92 (2007).

57. Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, D. C. Chrzan and E. E. Haller, “Comment On ‘Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2’ - Reply,” Phys. Rev. Lett. 99, 079602 (2007).

56. Q. Xu, I.D. Sharp, C.W. Yuan, D.O. Yi, C.Y. Liao, A.M. Glaeser, A.M. Minor, J.W. Beeman, M.C. Ridgway, P. Kluth, J.W. Ager III, D.C. Chrzan, and E.E. Haller, “Superheating and supercooling of Ge nanocrystals embedded in SiO2,” Proc. Intl. Confr. on Nanoscience and Technology (ICN+T2006), Basel, Switzerland, July 30-August 4, 2006; J. Phys.: Conf. Ser. 61, 1042-6 (2007).

55. A. Yang, M. Steger, M.L.W. Thewalt, M. Cardona, H. Riemann, N.V. Abrosimov, M.F. Churbanov, A.V. Gusev, A.D. Bulanov, I.D. Kovalev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.-J. Pohl, J.W. Ager III, and E.E. Haller, “High resolution photoluminescence of sulphur- and copper-related isoelectronic bound excitons in highly enriched Si-28,” Proc. ICDS-24, Albuquerque, NM, July 22-27, 2007; Physica B 401-2, 593 (2007).

54. J.W.L. Yim, R. E. Jones, K. M. Yu, J. W. Ager, W. Walukiewicz, W. J. Schaff and J. Wu, “Effects of Surface States on Electrical Characteristics of InN and In1-xGaxN,” Phys. Rev. B 76, 041303 (2007).

53. K.M. Yu, M. A. Scarpulla, R. Farshchi, O. D. Dubon and W. Walukiewicz, "Synthesis of Highly Mismatched Alloys Using Ion Implantation and Pulsed Laser Melting", Proceedings of the Nineteenth International Conference on The Application of Accelerators in Research and Industry, Fort Worth, TX, Aug. 20-25, 2006; Nucl. Instrum. Methods B 261 (1-2), 1150-4 (2007).

52. K.M. Yu, R. Farshchi, O. D. Dubon, J. W. Ager III, I. D. Sharp, and E. E. Haller, "Synthesis and Optical Properties of Multiband Iii-V Semiconductor Alloys", Proceedings of 28th International Conference on the Physics of Semiconductors, Vienna, Austria July 24-28, 2006; AIP Conf. Proc. 893, 1477 (2007).

51. L. Zeng, E. Helgren, F. Hellman, R. Islam, D. J. Smith and J. W. Ager, “Microstructure, Magnetotransport, and Magnetic Properties of Gd-Doped Amorphous Carbon,” Physical Review B 75 (23), 235450 (2007).

2006

50. J.W. Ager and E. E. Haller, “Isotopically Engineered Semiconductors: From the Bulk to Nanostructures,” phys. stat. sol. (a) 203(14), 3550-58 (2006).

49. S.P. Beckman and D. C. Chrzan, “Structure and energy of the partial dislocation cores in GaAs,” Phys. Stat. Sol. B 243, 2122 (2006).

48. A. Chaiken, G. A. Gibson, J. Chen, B. S. Yeh, J. Jasinski, Z. Liliental-Weber, K. Nauka, C. C. Yang, D. D. Lindig, and S. Sivaramakrishnan, “Electron-beam detection of bits reversible recorded on epitaxial InSe/GaSe phase-change diodes,” Jpn. J. Appl. Phys. 45, 2580 (2006).

47. T. Chung, J.-B. Limb, J.H. Ryou, W. Lee, P. Li, D.W. Yoo, X.B. Zhang, S.C. Shen, R.D. Dupuis, D. Keoqh, P. Asbeck, B. Chukunq, M. Fenq, D. Zakharov, and Z. Liliental-Weber, “Growth of InGaN HBTs by MOCVD,” J. Electron. Mater. 35, 695 (2006).

46. O. Cremonesi, R. Ardito, C. Arnaboldi, D. R. Artusa, F. T. Avignone, M. Balata, I. Bandac, M. Barucci, J. W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, F. Capozzi, L. Carbone, S. Cebrian, M. Clemenza, C. Cosmelli, R. J. Creswick, I. Dafinei, A. de Waard, M. Dolinski, H. A. Farach, F. Ferroni, E. Fiorini, C. Gargiulo, E. Guardincerri, A. Giuliani, P. Gorla, T. D. Gutierrez, E. E. Haller, I. G. Irastorza, E. Longo, G. Maier, R. Maruyama, S. Morganti, S. Nisi, C. Nones, E. B. Norman, A. Nucciotti, E. Olivieri, P. Ottonello, M. Pallavicini, E. Palmieri, M. Pavan, M. Pedretti, G. Pessina, S. Pirro, E. Previtali, B. Quiter, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A. R. Smith, L. Torres, G. Ventura, N. Xu, L. Zanotti and C. Collaboration, “New Cuoricino Results and Status of Cuore,” Physics of Atomic Nuclei 69 (12), 2083-9 (2006).

45. O.D. Dubon, M.A. Scarpulla, R. Farshchi, and K.M. Yu, “Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 630 (2006).

44. R. Farshchi, M. A. Scarpulla, P. R. Stone, K. M. Yu, I. D. Sharp, J. W. Beeman, H. H. Silvestri, L. A. Reichert, E. E. Haller and O. D. Dubon, “Compositional Tuning of Ferromagnetism in Ga1-xMnxP,” Solid State Commun. 140 (9-10), 443-6 (2006).

43. P. Gorla, F. Alessandria, R. Ardito, C. Arnaboldi, D. R. Artusa, F. T. Avignone, M. Balata, I. Bandac, M. Barucci, J. W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, L. Carbone, S. Cebrian, M. Clemenza, C. Cosmelli, O. Cremonesi, R. J. Creswick, I. Dafinei, S. Di Domizio, M. Diemoz, M. J. Dolinski, H. A. Farach, F. Ferroni, E. Fiorini, S. J. Freedman, C. Gargiulo, A. Giachero, E. Guardincerri, A. Giuliani, T. D. Gutierrez, E. E. Haller, K. Heeger, I. G. Irastorza, E. Longo, G. Maier, R. Maruyama, S. Morganti, S. Nisi, C. Nones, E. B. Norman, A. Nucciotti, P. Ottonello, M. Pallavicini, V. Palmieri, M. Pavan, M. Pedretti, G. Pessina, S. Pirro, E. Previtali, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A. R. Smith, L. Torres, G. Ventura, M. Vignati, N. Xu and L. Zanotti, “New Cuoricino Results on the Way to Cuore,” Physica Scripta T127, 49-51 (2006).

42. P. Gorla, R. Ardito, C. Arnaboldi, D.R. Artusa, F.T. Avignone, M. Balata, I. Bandac, M. Barucci, J. Beeman, C. Brofferio, C. Bucci, S. Capelli, F. Capozzi, L. Carbone, S. Cebrian, O. Cremonesi, R.J. Creswick, M. Dolinski, A. de Waard, H.A. Farach, F. Ferroni, E. Fiorini, G. Frossati, C. Gargiulo, A. Giuliani, E. Guardincerri, T. Gutierrez, E.E. Haller, I.G. Irastorza, E. Longo, G. Maier, R. Maruyama, R.J. McDonald, S. Morganti, A. Morales, S. Nisi, E.B. Norman, A. Nucciotti, E. Olivieri, P. Ottonello, M. Pallavicini, V. Palmieri, E. Pasca, M. Pavan, M. Pedretti, G. Pessina, S. Pirro, E. Previtali, B. Quiter, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A.R. Smith, Toffanin, L. Torres, G. Ventura, N. Xu, “Cuoricino and CUORE detectors: developing big arrays of large mass bolometers for rare events physics,” Nuclear Physics B – Proceedings Supplements150, 214-8 (2006).

41. E. E. Haller, “Germanium: From It’s Discovery to SiGe Devices,” Proc. E-MRS 2006 Spring Meeting, Nice, France May 29-June 3, 2006; Mat. Sci. in Semicond. Processing9(4-5), 408-22 (2006).

40. E. E. Haller, “Isotopically Controlled Semiconductors,” MRS Bulletin 31(7), 547 (2006).

39. A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller and H. Harima, ”Unconventional Superconductivity in the Itinerant Ferromagnet UGe273Ge-NQR Study under Pressure,” Proceedings of the International Conference on Strongly Correlated Electron Systems - SCES 2005, Vienna, Austria, July 26-30, 2005; Physica B 378-380, 963-4 (2006).

38. R.E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, “Evidence for p-type doping of InN,” Phys. Rev. Lett. 96, 125505 (2006).

37. R.E. Jones, S. X. Li, L. Hsu, K. M. Yu, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, “Electron Transport Properties of InN,” Mat. Res. Soc. Symp. Proc. 892, FF06-06 (2006).

36. R.E. Jones, S.X. Li, L. Hsu, K.M. Yu, W. Walukiewicz, Z. Liliental-Weber, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, “Native-defect-controlled n-type conductivity in InN,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 436 (2006).

35. S. Kawasaki, T. Sada, H. Mukuda, Y. Kitaoka, T. Miyoshi, H. Kotegawa, T.C. Kobayashi, T. Fukuhara, K. Maezawa, K.M. Itoh, and E.E. Haller, “Evidence for Unconventional Superconducting Fluctuations in Heavy-Fermion Compound CeNi2Ge2” J. Phys. Soc. Jpn. 75, 043702 (2006).

34. R. Klein, Poglitsch, A.; Raab, W.; Geis, N.; Hamidouche, M.; Looney, L.W.; Honle, R.; Schweitzer, M.; Viehhauser, W.; Genzel, R.; Haller, E.E.; Henning, T., “FIFI LS: the far-infrared integral field spectrometer for SOFIA,” SPIE Proc. 6269, 62691F-1-10 (2006).

33. S.X. Li, R. E. Jones, E. E. Haller, K. M. Yu, W. Walukiewicz, J. W. Ager III, Z. Liliental-Weber, H. Lu, and W. J. Schaff, “Photoluminescence of energetic particle-irradiated InxGa1-xN alloys,” Appl. Phys. Lett88, 151101 (2006).

32. S.X. Li, K.M. Yu, J. Wu, R.E. Jones, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, H. Lu, and W.J. Schaff, “Native defects in InxGa1-xN alloys,” Proceedings of the 23rdInternational Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 432 (2006).

31. K. Lawniczak-Jablonska, I. N. Demchenko, E. Piskorska, A. Wolska, E. Talik, D. N. Zakharov and Z. Liliental-Weber, “Examination of Local Structure of Composite and Low Dimension Semiconductor with X-Ray Absorption Spectroscopy,” Proceedings of the 3rd International Conference on Physics of Disordered Systems (PDS ‘05), Gdansk-Sobieszewo, Poland, September 18-21, 2005; Journal of Non-Crystalline Solids 352 (40-41), 4190-9 (2006).

30. Z. Liliental-Weber, D. Zakharov, B. Wagner, and R.F. Davis, “TEM studies of laterally overgrown GaN layers grown in polar and non-polar directions,” SPIE Proc. 6121, 612101 (2006).

29. Z. Liliental-Weber,  T. Tomaszewicz, D. Zakharov, M. O’Keefe, S. Hautakangas, K. Saarinen, and J. A. Freitas, “Atomic Structure of Pyramidal Defects in GaN:Mg; Influence of Annealing,” phys. stat. sol. (a) 203, 1636 (2006).

28. Z. Liliental-Weber, D.N. Zakharov, K.M. Yu, J.W. Ager III, W. Walukiewicz, E.E. Haller, H. Lu, and W.J. Schaff, “Compositional modulation of InxGa1-xN,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 468 (2006).

27. Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov, and M.A. O’Keefe, “Discovering a Defect that Imposes a Limit to Mg Doping in p-type GaN,” Microscopy & Micoanalysis 2006 Proceedings, Chicago, IL, July 31-August 2, 2006

26. X. Ni, Ü. Özgür, Y. Fu, N. Biykli, J. Xie, A.A. Baski, and H. Morkoç, “Defect reduction in (110) a-plane GaN by two-stage epitaxial lateral overgrowth,” Appl. Phys. Lett. 89, 262105 (2006).

25. V. Pačebutas, G. Aleksejenko, A. Krotkus, J. W. Ager III, W. Walukiewicz, H. Lu, and W. J. Schaff, “Optical bleaching effect in InN epitaxial layers,” Appl. Phys. Lett. 88, 191109 (2006).

24. S. Pirro, C. Arnaboldi, D.R. Artusa, F.T. Avignone III, M. Balata, I. Bandac, M. Barucci, J.W. Beeman, F. Bellini, C. Brofferio, C. Bucci, S. Capelli, F. Capozzi, L. Carbone, S. Cebrian, M. Clemenza, O. Cremonesi, R.J. Creswick, A. de Waard, M. Dolinski, H.A. Farach, E. Fiorini, G. Frossati, E. Guardincerri, A. Giuliani, P. Gorla, T.D. Gutierrez, E.E. Haller, R. Maruyama, S. Nisi, C. Nones, E.B. Norman, A. Nucciotti, E. Olivieri, M. Pallavicini, V. Palmieri, E. Pasca, M. Pavan, M. Pedretti, G. Pessina, E. Previtali, B. Quiter, L. Risegari, C. Rosenfeld, S. Sangiorgio, M. Sisti, A.R. Smith, L. Torres, G. Ventura, “Further developments in the CUORICINO experiment,” Proceedings of the 11thInternational Workshop on Low Temperature Detectors - LTD-11, Tokyo, Japan, July 31-August 5 2005; Nucl. Instrum. Methods A 559(2), 352-4 (2006). 

23. R. Püsche, M. Hundhausen, L. Ley, K. Semmelroth, G. Pensl, P. Desperrier, P.J. Wellmann, E.E. Haller, J.W. Ager, U. Starke, “Electronic Raman Studies of Shallow Donors in Silicon Carbide,” Proc. ICSCRM, Pittsburgh, PA, 9/2005; Materials Science Forum 527-529, 579-84 (2006).

22. W. Raab, A. Poglitsch, R. Klein, R. Hoenle, M. Schweizer, W.  Viehhauser, N. Geis, R. Genzel, L.W. Looney, M. Hamidouche, T. Henning, and E.E. Haller, “Characterizing the system performance of FIFI LS: the field-imaging far-infrared line spectrometer for SOFIA,” SPIE Proc. 6269, 62691G-1-10 (2006).

21. J.T. Robinson, O. D., Dubon, J. A. Liddle, A. Minor, and V. Radmilovic, “Morphological evolution of Ge islands patterned on Au-patterned Si,” The 16th American Conference on Crystal Growth and Epitaxy - ACCGE 16, Big Sky, Montana, July 10-15, 2005; J. Cryst. Growth 287, 518 (2006). 

20. T. Schenkel, J. A. Liddle, A. Persaud, S. J. Park, J. Shangkuan, C. C. Lo, S. Kwon, S. A. Lyon, A. M. Tyryshkin, I. W. Rangelow, D. H. Schneider, J. Ager, and R. de Sousa, “Strategies for integration of donor electron spin qubits in silicon,” Microelectronic Eng83, 1814 (2006). 

19. E.G. Seebauer, K. Dev, M. Y. L. Jung, R. Vaidyanathan, C. T. M. Kwok, J. W. Ager, E. E. Haller, and R. D. Braatz, “Control of Defect Concentrations within a Semiconductor through Adsorption,” Phys. Rev. Lett. 97, 055503 (2006).

18. W. Shan, W. Walukiewicz, K.M. Yu, J. Wu, J.W. Ager III, and E.E. Haller, “New Development in Dilute Nitride Materials Resaerch,” in III-Nitride Semiconductor Materials, edited by Zhe Chuan Feng (World Scientific, Singapore, 2006). Chapter 12.

17. I.D. Sharp, Q. Xu, D. O. Yi, C. W. Yuan, J. W. Beeman, K. M. Yu, J. W. Ager, D. C. Chrzan and E. E. Haller, “Structural Properties of Ge Nanocrystals Embedded in Sapphire,” J. Appl. Phys. 100, 114317 (2006).

16. I.D. Sharp, Q. Xu, D. O. Yi, C. Y. Liao, J. W. Ager III, J. W. Beeman, K. M. Yu, D. C. Chrzan, and E. E. Haller, “A Chemical Approach to 3-D Lithographic Patterning of Ge Nanocrystals,” Mat. Res. Soc. Symp. Proc. 901E, Rb-09-03.1 (2006).

15. H.H. Silvestri, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, and E. E. Haller, “Diffusion of Silicon in Cristalline Germanium,” Semicond. Sci. Technol21, 758 (2006).

14. P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, E. Erni, and C. Kisielowski, “Zincblende and wurtzite phase in InN epilayers and their respective band transitions,” Proceedings of the Second ONR International Indium Nitride Workshop Kailua-Kona, Hawaii, Jan. 9-13, 2005; J. Crystal Growth 288, 225 (2006).

13. P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, E. Erni, and C. Kisielowski, “Zincblende and wurtzite phase in InN epilayers and their respective band transitions,”Proceedings of the Second ONR International Indium Nitride Workshop Kailua-Kona, Hawaii, January 9-13, 2005; J. Crystal Growth 288, 225 (2006).

12. P.R. Stone, M. A. Scarpulla, R. Farshchi, I. D. Sharp, E. E. Haller, O. D. Dubon, K. M. Yu, J. W. Beeman, E. Arenholz, J. D. Denlinger, and H. Ohldag, “Mn L3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP,” Appl. Phys. Lett. 89, 012504 (2006).

11. L.A. Reichertz, J.W. Beeman, B.L. Cardozo, G. Jakob, R. Katterloher, N.M. Haegel, and E.E. Haller, SPIE Proc. 6275, 62751S-1-8 (2006).

10. A.M. Tyryshkin, J. J. L. Morton, S. C. Benjamin, A. Ardavan, G. A. D. Briggs, J. W. Ager III, and S. A. Lyon, “Coherence of Spin Qubits in Silicon,” J. Phys. Cond. Mat. 18, S783 (2006).

9. B.P. Wagner, Z. J. Reitmeier, J. S. Park, D. Bachelor, D. N. Zakharov, Z. Liliental-Weber, and R. F. Davis, “Growth and Characterization of Pendeo-Epitaxial GaN (110) on 4H-SiC(110) Substrates,” J. Cryst. Growth 290(2), 504-12 (2006).

8. W. Walukiewicz, R.E. Jones, S.X. Li, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, “Dopants and defects in InN and InGaN alloys,” Proceedings of the Second ONR International Indium Nitride Workshop Kailua-Kona, Hawaii, January 9-13,  2005; J. Crystal Growth 288, 278 (2006).

7. W. Walukiewicz, J. W. Ager III, K. M. Yu, Z. Liliental-Weber, J. Wu, S. X. Li, R. E. Jones, and J. D. Denlinger, “Structure and Electronic Properties of InN and In-rich Group III-Nitride Alloys,” J. Phys. D 39, R83 (2006).

6. E.R. Weber, Q. Yang, and H. Feick, “Defects related to N-sublattice damage in electron irradiated GaN,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 447 (2006). 

5. Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M.  Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager III, D. C. Chrzan and E. E. Haller, “Large Melting Point Hysteresis of Ge Nanocrystals Embedded in SiO2,” Phys. Rev. Lett. 97, 155701 (2006). 

4. A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, J. W. Ager and E. E. Haller, “ Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States,” Phys. Rev. Lett. 97, 227401 (2006).

3. A. Yang, H. J. Lian, M. L. W. Thewalt, M. Uemura A. Sagara, K. M. Itoh, E. E. Haller, J. W. Ager, and S. A. Lyon, “Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions,” Proceedings of the 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005; Physica B 376-7, 54 (2006).

2. K.M. Yu, W. Walukiewicz, J.W. Ager III, D. Bour, R. Farshchi, O.D. Dubon, S.X. Li, I.D. Sharp, and E.E. Haller, “Multiband GaNAsP quaternary alloys,” Appl. Phys. Lett88, 092110 (2006).

1. D.N. Zakharov, Z. Liliental-Weber, Y. Gao, and E. Hu, “Structural defects in Si-doped III-V nitrides,” J. Electron. Mater. 35(7), 1543-6 (2006).