Eugene E. Haller is Professor in the Graduate School at UC Berkeley (previously Professor of Materials Science and Engineering until June 2011) and holds a joint appointment at the Lawrence Berkeley National Laboratory in the Materials Sciences Division where he served as leader of the Electronic Materials Program until September 2011. He received his Ph.D. degree in nuclear and applied physics from the University of Basel, Switzerland for surface studies of large volume p-i-n germanium diodes used as gamma-ray detectors. His research interests cover a wide spectrum of semiconductor topics including basic semiconductor physics, thin film and bulk crystal growth and advanced detectors for electromagnetic radiation ranging from the far-infrared to gamma rays, neutrinos and dark matter. In recent years he has pioneered numerous scientific studies and applications of isotopically controlled semiconductors. He has authored and co-authored over 800 scientific/technical publications.
He is a fellow of the American Physical Society, the American Association for the Advancement of Science, the Materials Research Society (inaugural class) and the National Academy of Engineering, has won an Alexander von Humboldt U.S. Senior Scientist Award in 1986, two Miller Research Professorships in 1990 and 2001, the Max-Planck-Research Prize in 1994, the James McGroddy Prize for New Materials of the American Physical Society in March 1999, and the MRS David Turnbull Lectureship Award in 2005. He held visiting professorships at Keio University I Tokyo, at the Max-Planck-Institute for Solid State Research in Stuttgart, at the Imperial College in London and at the DLR (German Aerospace Corporation) in Berlin. He is a member of the Editorial Advisory Board of the "Journal of Physics and Chemistry of Solids," of "Materials Science Foundations" and of the "Journal of Applied Physics Reviews."
• Swanee J.
Guzman, Chun-Wei Yuan, Christopher Y. Liao, Cosima
N. Boswell-Koller, Peter R. Stone,
Oscar D. Dubon, Andrew M. Minor, Masashi
Watanabe, Jeffrey W. Beeman, K. M. Yu, Joel W. Ager III, Daryl C. Chrzan, and Eugene
E. Haller, “Embedded Binary Eutectic Alloy Nanostructures: A New Class of Phase
Change Materials,” Nano Letters 10(8),
• R.E. Jones, K.M. Yu, S.X. Li, W. Walukiewicz, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, “Evidence for p-type doping of InN,” Phys. Rev. Lett. 96, 125505 (2006).
• Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager III, D. C. Chrzan and E. E. Haller, “Large Melting Point Hysteresis of Ge Nanocrystals Embedded in SiO2,” Phys. Rev. Lett. 97, 155701-1-4 (2006).
• J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, William J. Schaff, Yoshiki Saito and Yasushi Nasnishi, “Unusual Properties of the Fundamental Band Gap of InN,” Appl. Phys. Lett. 80(21), 3967-9 (2002).
• H. Bracht, S. P. Nicols, W. Walukiewicz, J. P. Silvera, F. Briones and E. E. Haller, “Large Disparity Between Gallium and Antimony Self-Diffusion in Gallium Antimonide,” Nature 408(6808), 69-72 (2000).
• W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, B. J. Friedman, J. M. Olsen and S. R. Kurtz, “Band Anticrossing in GaInNAs Alloys,” Phys. Rev. Lett. 82(6), 1221-4 (1999).
• Lei Wang, Leon Hsu, E. E. Haller, Jon W. Erickson, A. Fischer, K. Eberl and M. Cardona, “Ga Self-Diffusion in GaAs Isotope Heterostructures,” Phys. Rev. Lett. 76(13), 2342-5 (1996).
• E. E. Haller, “Isotopically Engineered Semiconductors,” Applied Physics Reviews, J. Appl. Phys. 77 (7) 2857-78 (1995).
• O. D. Dubon, J. W. Beeman, L. M. Falicov, H. D. Fuchs, E. E. Haller, and C. Wang, “Copper Acceptors in Uniaxially Stressed Germanium: (1s)3 to (1s)2(2s)1 Ground-State Transformation,” Phys. Rev. Lett. 72, 2231-4 (1994).
• E. E. Haller, “Isotope Shifts in the Ground State of Shallow, Hydrogenic Centers in Pure Germanium,” Phys. Rev. Lett. 40, No. 9, 584-6 (1978)